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KAF-50100-ABA-JP-BA

Onsemi

KAF-50100-ABA-JP-BA by Onsemi

The Onsemi KAF-50100-ABA-JP-BA is a CCD image sensor with 6x6 um pixel size, offering a max supply voltage of 15.5V and a dynamic range of 70.2 dB. Ideal for applications requiring high-resolution imaging in environments with temperatures ranging from 0 to 60 °C, such as scientific research or industrial inspection systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 4,194 parts In-Stock

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Digiode

USA . 645 parts In-Stock

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AZTECH Wire

Italy . 724 parts In-Stock

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SupplyDigital Components

Austria . 4,319 parts In-Stock

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Corphita

USA . 1,646 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 1,169 parts In-Stock

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TANS Electronics

Latvia . 487 parts In-Stock

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Corohmni

South Africa . 351 parts In-Stock

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UHIMA Technologies

Türkiye . 246 parts In-Stock

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Overview

Discover the unparalleled quality and innovation of the KAF-50100-ABA-JP-BA image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and reliability. Ideal for a wide range of applications, this sensor offers superior image quality and precise pixel size, making it a versatile choice for various imaging needs. Experience the value and benefits of this cutting-edge product, from its exceptional dynamic range to its high resolution capabilities. Upgrade your imaging systems with the KAF-50100-ABA-JP-BA and unlock endless possibilities in capturing stunning visuals.

Feature Benefit Bullets

Pixel Size (um): 6X6

Smaller pixel size results in higher resolution images, making this sensor ideal for high quality image capture.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage allows for increased flexibility in power supply options and potential performance enhancements.

Body Width: 50.8 inch

Compact body width allows for easy integration into various electronic devices without taking up much space.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high quality image capture capabilities, making this sensor a reliable choice for imaging applications.

Body Height: 3.46 mm

Low body height enables a slim design for the sensor, suitable for applications where space is limited.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for easy mounting and alignment in electronic devices, ensuring proper functionality.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage ensures efficient power consumption and compatibility with a wide range of power sources.

Maximum Operating Temperature: 60 °C

High maximum operating temperature makes this sensor suitable for use in various environmental conditions without compromising performance.

Horizontal Pixel: 8176

High horizontal pixel count results in detailed images with sharp resolution, making this sensor ideal for capturing fine details.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures reliable performance even in cold environments, increasing the sensor's versatility.

Housing: CERAMIC

Ceramic housing offers durability and thermal stability, protecting the sensor from external factors and ensuring long-term reliability.

Dynamic Range: 70.2 dB

Wide dynamic range allows the sensor to capture a wide range of light intensities with precision, ensuring accurate image reproduction.

Vertical Pixel: 6132

High vertical pixel count contributes to the sensor's ability to capture detailed images with clarity and depth.

Body Length/Diameter: 59.61 mm

Optimal body length/diameter ratio provides a balance between compact design and functionality, making the sensor easy to integrate into various systems.

Spectral Response (nm): 350-1100

Wide spectral response range allows the sensor to capture a broad range of wavelengths, making it suitable for diverse imaging applications.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections, preventing signal loss and maintaining consistent performance.

Array Type: FULL FRAME

Full frame array type provides complete coverage of the image area without any cropping, ensuring accurate and detailed image capture.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature simplifies the installation process and facilitates a secure connection, ensuring stable performance in various applications.

Technical Specifications

Image Sensors KAF-50100-ABA-JP-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 31 MICRO VOLT PER ELECTRON, IT ALSO HAVE ESTIMATED LINEAR DYNAMIC RANGE 69.3 DB

Array Type:

FULL FRAME

Body Width:

50.8 inch

Body Height:

3.46 mm

Body Length/Diameter:

59.61 mm

Dynamic Range:

70.2 dB

Horizontal Pixel:

8176

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Spectral Response (nm):

350-1100

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

6132

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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