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KAF-50100-ABA-JP-AE

Onsemi

KAF-50100-ABA-JP-AE by Onsemi

The Onsemi KAF-50100-ABA-JP-AE is a CCD image sensor with 6x6 um pixel size, offering a high dynamic range of 70.2 dB. With 8176 horizontal and 6132 vertical pixels, it operates b/w 0-60 °C and is ideal for full-frame imaging applications in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Vyrian

USA . 935 parts In-Stock

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Digiode

USA . 817 parts In-Stock

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Kulean Microsystems

USA . 5,395 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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TANS Electronics

Latvia . 4,302 parts In-Stock

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SupplyDigital Components

Austria . 3,488 parts In-Stock

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Corphita

USA . 936 parts In-Stock

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Problanco Electronics

Mexico . 643 parts In-Stock

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UHIMA Technologies

Türkiye . 348 parts In-Stock

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Corohmni

South Africa . 140 parts In-Stock

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Overview

Capture the essence of every moment with the KAF-50100-ABA-JP-AE Image Sensor by Onsemi. Designed with precision and expertise, this sensor promises unparalleled quality and reliability. Whether you're a professional photographer or a tech enthusiast, this product offers endless possibilities for creative expression. Elevate your projects with its advanced features and innovative technology. Embrace the power of visual storytelling with the KAF-50100-ABA-JP-AE and unlock a world of captivating imagery like never before.

Feature Benefit Bullets

Pixel Size (um): 6X6

Smaller pixel size allows for higher resolution images to be captured, making this image sensor suitable for applications where fine details need to be captured.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage provides flexibility in power supply options, ensuring reliable operation in various environments.

Body Width: 50.8 inch

Compact body width allows for easy integration into different systems or devices, making this image sensor versatile for different applications.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image output and low-noise performance, making this image sensor a great choice for applications requiring high image quality.

Body Height: 3.46 mm

Low body height enables the image sensor to be used in slim devices or applications where space is limited.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for easy mounting and integration into various systems, ensuring compatibility with different designs.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage ensures efficient power consumption, making this image sensor energy-efficient and suitable for battery-powered devices.

Maximum Operating Temperature: 60 °C

Wide operating temperature range allows this image sensor to be used in extreme temperature conditions without compromising performance.

Horizontal Pixel: 8176

High horizontal pixel count enables detailed and high-resolution images to be captured, making this image sensor ideal for applications where image clarity is crucial.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures reliable performance in cold environments, making this image sensor suitable for outdoor or industrial applications.

Housing: CERAMIC

Ceramic housing offers durability and thermal stability, ensuring the image sensor can withstand harsh conditions and maintain optimal performance.

Dynamic Range: 70.2 dB

High dynamic range allows the image sensor to capture both bright and dark areas in a scene accurately, making it suitable for applications with high contrast scenes.

Vertical Pixel: 6132

High vertical pixel count enhances the image sensor's ability to capture detailed images with good vertical resolution, making it ideal for applications requiring precise image capture.

Body Length/Diameter: 59.61 mm

Optimal body length/diameter ratio provides a balance between compact size and integration flexibility, making this image sensor suitable for various applications.

Spectral Response (nm): 350-1100

Wide spectral response range allows the image sensor to capture images across different wavelengths, making it suitable for a wide range of applications including scientific imaging.

Termination Type: SOLDER

Solder termination ensures secure connection and reliable performance, making this image sensor suitable for applications where connectivity is crucial.

Array Type: FULL FRAME

Full-frame array type provides maximum image sensor coverage, ensuring no image details are missed or cropped out, making it ideal for high-resolution imaging applications.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature offers secure and stable mounting options, making this image sensor suitable for applications where stability is important, such as in industrial or automotive systems.

Technical Specifications

Image Sensors KAF-50100-ABA-JP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 31 MICRO VOLT PER ELECTRON, IT ALSO HAVE ESTIMATED LINEAR DYNAMIC RANGE 69.3 DB

Array Type:

FULL FRAME

Body Width:

50.8 inch

Body Height:

3.46 mm

Body Length/Diameter:

59.61 mm

Dynamic Range:

70.2 dB

Horizontal Pixel:

8176

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Spectral Response (nm):

350-1100

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

6132

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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