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KAF-50100-ABA-JR-AE

Onsemi

KAF-50100-ABA-JR-AE by Onsemi

The Onsemi KAF-50100-ABA-JR-AE is a CCD image sensor with 6x6 um pixel size, offering 8176 (H) x 6132 (V) resolution. With a dynamic range of 70.2 dB and spectral response of 350-1100 nm, it's ideal for high-resolution imaging applications in industrial and scientific fields. Operating b/w 0 to 60 °C, this rectangular sensor has a ceramic housing and requires a supply voltage b/w 14.5V to 15.5V for optimal performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,472 parts In-Stock

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Digiode

USA . 1,412 parts In-Stock

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Problanco Electronics

Mexico . 7,936 parts In-Stock

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Kulean Microsystems

USA . 5,967 parts In-Stock

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TANS Electronics

Latvia . 5,077 parts In-Stock

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SupplyDigital Components

Austria . 2,419 parts In-Stock

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Corphita

USA . 1,163 parts In-Stock

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Corohmni

South Africa . 440 parts In-Stock

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UHIMA Technologies

Türkiye . 213 parts In-Stock

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Overview

Experience superior image quality and performance with the KAF-50100-ABA-JR-AE by Onsemi. As a leading manufacturer of image sensors, Onsemi delivers high-quality products that excel in a variety of applications. Whether you're capturing stunning visuals for security systems, scientific imaging, or industrial automation, this CCD image sensor offers exceptional value and benefits. Trust in Onsemi's reputation for reliability and innovation, and unlock the full potential of your imaging projects with the KAF-50100-ABA-JR-AE.

Feature Benefit Bullets

Pixel Size (um): 6X6

Smaller pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage: 15.5 V

Allows for a wide range of input voltage, providing flexibility in different applications.

Body Width: 50.8 inch

Compact size makes it easy to integrate into various devices without taking up much space.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors provide high-quality images with low noise, making them ideal for applications requiring high image clarity.

Body Height: 3.46 mm

Low profile design enables easy installation in thin devices or tight spaces.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for efficient placement and orientation within a device.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage helps in reducing power consumption and extending battery life.

Maximum Operating Temperature: 60 °C

Wide operating temperature range ensures performance in various environmental conditions.

Horizontal Pixel: 8176

High number of horizontal pixels allows for detailed and sharp images across a wide field of view.

Minimum Operating Temperature: 0 °C

Can operate in cold temperatures without performance degradation, suitable for outdoor applications.

Housing: CERAMIC

Ceramic housing provides durability and thermal stability, ensuring long-term reliability.

Dynamic Range: 70.2 dB

Wide dynamic range captures both bright and dark areas in the same scene without loss of detail.

Vertical Pixel: 6132

High number of vertical pixels allows for high-resolution images with excellent clarity and depth.

Body Length/Diameter: 59.61 mm

Optimal size for versatile integration into different devices or systems.

Spectral Response (nm): 350-1100

Wide spectral response range enables capturing images across various wavelengths, suitable for different applications.

Termination Type: SOLDER

Solder termination provides a reliable electrical connection for seamless integration into circuit boards.

Array Type: FULL FRAME

Full-frame array captures the entire image in one go, reducing the need for stitching multiple images together.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature offers secure and stable attachment to circuit boards or devices.

Technical Specifications

Image Sensors KAF-50100-ABA-JR-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 31 MICRO VOLT PER ELECTRON, IT ALSO HAVE ESTIMATED LINEAR DYNAMIC RANGE 69.3 DB

Array Type:

FULL FRAME

Body Width:

50.8 inch

Body Height:

3.46 mm

Body Length/Diameter:

59.61 mm

Dynamic Range:

70.2 dB

Horizontal Pixel:

8176

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Spectral Response (nm):

350-1100

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

6132

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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