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KAI-16070-FXA-JD-B2

Onsemi

KAI-16070-FXA-JD-B2 by Onsemi

KAI-16070-FXA-JD-B2 by Onsemi is an image sensor with 7.4x7.4 um pixel size, 40 MHz master clock, and 70.5 dB dynamic range. Ideal for applications requiring high-resolution imaging in industrial cameras or scientific instruments due to its 4864x3232 pixel resolution and INTERLINE array type.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,588 parts In-Stock

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Digiode

USA . 2,427 parts In-Stock

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AZTECH Wire

Italy . 754 parts In-Stock

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$15.660

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754

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Problanco Electronics

Mexico . 7,826 parts In-Stock

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Kulean Microsystems

USA . 3,191 parts In-Stock

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Corphita

USA . 2,033 parts In-Stock

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TANS Electronics

Latvia . 1,689 parts In-Stock

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SupplyDigital Components

Austria . 568 parts In-Stock

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Corohmni

South Africa . 246 parts In-Stock

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UHIMA Technologies

Türkiye . 191 parts In-Stock

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Overview

Experience stunning image quality and superior performance with the KAI-16070-FXA-JD-B2 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-of-the-line image sensors that excel in various applications. Whether you're in the field of surveillance, medical imaging, or industrial automation, this image sensor guarantees exceptional results. With its high-quality build and innovative technology, the KAI-16070-FXA-JD-B2 offers unmatched value, benefits, and advantages to customers looking for reliable imaging solutions. Elevate your projects and capture every detail with precision using this cutting-edge product from Onsemi.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Smaller pixel size allows for higher resolution images to be captured, making this image sensor suitable for applications where detail is crucial.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage provides flexibility in power supply options and ensures reliable operation in various voltage conditions.

Master Clock: 40 MHz

High master clock frequency enables fast data readout and processing, resulting in quick performance of the image sensor.

Body Width: 45.34 inch

The compact body width allows for easy integration into different devices and systems without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD image sensors are known for their high-quality image output and low noise, making this sensor a great choice for demanding imaging applications.

Body Height: 3.61 mm

Low body height facilitates slim designs and enables the image sensor to be used in applications with space constraints.

Package Shape or Style: RECTANGULAR

Rectangular package shape provides easy handling and installation in various devices, ensuring compatibility and ease of use.

Minimum Supply Voltage: 14.5 V

The lower minimum supply voltage ensures efficient power consumption and allows for operation in lower voltage conditions, increasing flexibility.

Maximum Operating Temperature: 70 °C

High maximum operating temperature range ensures reliable performance even in harsh environmental conditions, making this sensor ideal for outdoor and industrial applications.

Horizontal Pixel: 4864

High horizontal pixel count enables capturing detailed and wide images, making this sensor suitable for applications requiring high-resolution imaging.

Minimum Operating Temperature: -50 °C

Wide minimum operating temperature range allows for operation in extreme cold conditions, making this image sensor versatile and suitable for various environments.

Dynamic Range: 70.5 dB

High dynamic range enables the sensor to capture both bright and dark areas in an image accurately, ensuring excellent image quality in varying lighting conditions.

Vertical Pixel: 3232

High vertical pixel count allows for capturing detailed images with fine vertical resolution, making this sensor ideal for applications requiring precise imaging.

Body Length/Diameter: 47.24 mm

The moderate body length/diameter ratio provides a balance between compact size and functionality, making this sensor suitable for various applications.

Optical Format (inch): 1.37

The specified optical format ensures compatibility with various lenses and optical systems, making this sensor versatile and suitable for different imaging setups.

Termination Type: SOLDER

Solder termination offers a reliable and secure connection for the image sensor, ensuring stable performance and durability in different operating conditions.

Frame Rate: 8 fps

Although the frame rate is not high, it is suitable for applications where slower frame rates are acceptable, such as surveillance or industrial monitoring.

Array Type: INTERLINE

Interline array type provides fast readout speed and reduced image lag, making this sensor suitable for applications where capturing moving objects is important.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature allows for secure and stable installation of the image sensor on PCBs or mounting surfaces, ensuring reliable operation in different setups.

Technical Specifications

Image Sensors KAI-16070-FXA-JD-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 33 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT HAS OPTICAL FORMAT 1.37 INCH, IT HAS EXTENDED LINEAR DYNAMIC RANGE 82.5 DB

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Height:

3.61 mm

Body Length/Diameter:

47.24 mm

Dynamic Range:

70.5 dB

Frame Rate:

8 fps

Horizontal Pixel:

4864

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1.37

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

3232

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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