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KAI-1003M

Onsemi

KAI-1003M by Onsemi

KAI-1003M by Onsemi is an image sensor with 1024x1024 pixels, 12.8um pixel size, and operates at a max supply voltage of 15.5V. It is ideal for applications requiring high-resolution imaging in industrial cameras, medical devices, and scientific instruments due to its CCD technology and rectangular package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,299 parts In-Stock

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Vyrian

USA . 598 parts In-Stock

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Problanco Electronics

Mexico . 8,252 parts In-Stock

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SupplyDigital Components

Austria . 8,241 parts In-Stock

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TANS Electronics

Latvia . 4,669 parts In-Stock

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Corphita

USA . 2,394 parts In-Stock

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Kulean Microsystems

USA . 1,479 parts In-Stock

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Corohmni

South Africa . 495 parts In-Stock

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UHIMA Technologies

Türkiye . 486 parts In-Stock

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Overview

Experience the cutting-edge technology of the KAI-1003M image sensor by Onsemi, designed to deliver superior image quality and performance. Perfect for a wide range of applications in industries such as surveillance, medical imaging, and industrial automation, this sensor offers unparalleled value with its high resolution and precision. Trust in Onsemi's reputation for excellence and innovation, and unlock endless possibilities with the KAI-1003M at your disposal. Elevate your projects to new heights with this exceptional image sensor.

Feature Benefit Bullets

Pixel Size (um): 12.8X12.8

Large pixel size allows for better light sensitivity and improved image quality.

Maximum Supply Voltage: 15.5 V

Higher supply voltage can provide better signal-to-noise ratio and overall performance.

Body Width: 25.781 inch

Compact size makes it suitable for integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for high-quality image capture and low noise levels.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage helps in reducing power consumption.

Maximum Operating Temperature: 40 °C

Wide operating temperature range ensures reliable performance in different environments.

Horizontal Pixel: 1024

High pixel count allows for detailed and clear image capture.

Output Range: 1.30V

Stable output voltage range for reliable signal transmission.

Output Type: ANALOG VOLTAGE

Analog output allows for compatibility with a wide range of devices and systems.

Minimum Operating Temperature: 0 °C

Can operate in extreme cold conditions without performance degradation.

Vertical Pixel: 1024

Equal vertical pixel count ensures high-resolution image output.

Body Length/Diameter: 40.132 mm

Compact and standardized size for easy integration and mounting.

Spectral Response (nm): 400-700

Wide spectral response range for capturing a broad range of colors and wavelengths.

Termination Type: SOLDER

Solder termination for secure and reliable electrical connections.

Frame Rate: 60 fps

High frame rate allows for smooth and real-time image capture.

Array Type: INTERLINE

Interline array design for improved image quality and reduced blooming effects.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting for secure and stable installation.

Technical Specifications

Image Sensors KAI-1003M attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

INTERLINE

Body Width:

25.781 inch

Body Length/Diameter:

40.132 mm

Frame Rate:

60 fps

Horizontal Pixel:

1024

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

0 Cel

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

12.8X12.8

Sensors or Transducers Type:

Spectral Response (nm):

400-700

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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