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KAI-1003-AAA-CR-AE

Onsemi

KAI-1003-AAA-CR-AE by Onsemi

KAI-1003-AAA-CR-AE by Onsemi is an image sensor with 1024x1024 pixels, 12.8um pixel size, and 72dB dynamic range. It operates b/w 0 to 40 °C, suitable for industrial imaging applications requiring high-resolution and sensitivity. The rectangular CCD sensor has a ceramic housing and through-hole mounting feature for robust performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 969 parts In-Stock

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Vyrian

USA . 147 parts In-Stock

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TANS Electronics

Latvia . 8,306 parts In-Stock

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Kulean Microsystems

USA . 8,101 parts In-Stock

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Problanco Electronics

Mexico . 4,444 parts In-Stock

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SupplyDigital Components

Austria . 2,168 parts In-Stock

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Corphita

USA . 710 parts In-Stock

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Corohmni

South Africa . 402 parts In-Stock

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UHIMA Technologies

Türkiye . 311 parts In-Stock

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Overview

Capture breathtaking images with the KAI-1003-AAA-CR-AE image sensor from Onsemi. This high-quality sensor boasts impressive pixel size and dynamic range, making it ideal for a wide range of applications. From professional photography to industrial imaging, this CCD sensor delivers unparalleled performance. With a durable ceramic housing and precise solder terminations, this sensor is built to last. Trust Onsemi's reputation for excellence and elevate your imaging experience with the KAI-1003-AAA-CR-AE.

Feature Benefit Bullets

Pixel Size (um) 12.8X12.8

Smaller pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage 15.5 V

Allows for flexibility in power supply options and ensures stable operation at higher voltage levels.

Body Width 25.4 inch

Compact size makes it easy to integrate into various devices and applications.

Sensors or Transducers Type IMAGE SENSOR,CCD

CCD type sensors offer high-quality image capture with low noise levels.

Body Height 4.45 mm

Low profile design makes it suitable for slim devices and applications.

Package Shape or Style RECTANGULAR

Rectangular shape allows for efficient placement and alignment in devices.

Minimum Supply Voltage 14.5 V

Lower minimum supply voltage helps in reducing power consumption and heat generation.

Maximum Operating Temperature 40 °C

Wide operating temperature range allows for usage in various environmental conditions.

Horizontal Pixel 1024

High horizontal pixel count enables detailed image capture with good resolution.

Minimum Operating Temperature 0 °C

Can operate in low-temperature environments without any issues.

Housing CERAMIC

Ceramic housing provides durability and thermal stability for long-term use.

Dynamic Range 72 dB

High dynamic range ensures accurate and clear image reproduction with good contrast.

Vertical Pixel 1024

High vertical pixel count complements the horizontal resolution for comprehensive image capture.

Body Length/Diameter 40.13 mm

Optimal size for fitting into different device configurations without taking up too much space.

Termination Type SOLDER

Solder termination offers secure and reliable connections for stable performance.

Array Type INTERLINE

Interline array type provides faster readout speeds for capturing moving objects or scenes.

Mounting Feature THROUGH HOLE MOUNT

Through-hole mounting feature ensures secure installation and easy integration into various devices.

Technical Specifications

Image Sensors KAI-1003-AAA-CR-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 34 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

25.4 inch

Body Height:

4.45 mm

Body Length/Diameter:

40.13 mm

Dynamic Range:

72 dB

Horizontal Pixel:

1024

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

0 Cel

Package Shape or Style:

Pixel Size (um):

12.8X12.8

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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