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KAI-16070-FXA-JD-AE

Onsemi

KAI-16070-FXA-JD-AE by Onsemi

KAI-16070-FXA-JD-AE by Onsemi is an image sensor with 7.4x7.4 um pixel size, 40 MHz master clock, and 70.5 dB dynamic range. Ideal for applications requiring high-resolution imaging at a max supply voltage of 15.5 V and operating temperatures ranging from -50 to 70 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 664 parts In-Stock

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Digiode

USA . 498 parts In-Stock

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Problanco Electronics

Mexico . 8,170 parts In-Stock

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SupplyDigital Components

Austria . 7,319 parts In-Stock

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TANS Electronics

Latvia . 7,275 parts In-Stock

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Corphita

USA . 2,351 parts In-Stock

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Kulean Microsystems

USA . 551 parts In-Stock

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Corohmni

South Africa . 343 parts In-Stock

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UHIMA Technologies

Türkiye . 34 parts In-Stock

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Overview

Elevate your imaging experience with the KAI-16070-FXA-JD-AE by Onsemi, a cutting-edge image sensor that delivers unparalleled quality and performance. As a leading manufacturer in the industry, Onsemi has crafted this sensor to provide exceptional clarity and precision in a wide range of applications. Whether you're capturing stunning visuals for industrial inspections or creating breathtaking photography, this sensor offers unmatched value, benefits, and advantages to meet your needs. Upgrade your imaging technology today with the KAI-16070-FXA-JD-AE and experience the difference for yourself.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Larger pixel size allows for better light capture, resulting in higher image quality.

Maximum Supply Voltage: 15.5 V

Higher supply voltage allows for better performance and stability.

Master Clock: 40 MHz

High master clock allows for fast data processing and high-speed image capture.

Body Width: 45.34 inch

Compact body width makes it suitable for integration in various devices.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors are known for their high image quality and sensitivity.

Body Height: 3.61 mm

Low body height allows for easy integration in slim devices.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for efficient use of space and easy mounting.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage helps in energy efficiency.

Maximum Operating Temperature: 70 °C

High maximum operating temperature allows for use in various environments.

Horizontal Pixel: 4864

High horizontal pixel count provides detailed and high-resolution images.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature ensures usability in extreme cold conditions.

Dynamic Range: 70.5 dB

High dynamic range allows for capturing both bright and dark areas in the same image.

Vertical Pixel: 3232

High vertical pixel count provides detailed and high-resolution images.

Body Length/Diameter: 47.24 mm

Compact body length/diameter allows for easy integration in various devices.

Optical Format (inch): 1.37

Standard optical format ensures compatibility with different lenses.

Termination Type: SOLDER

Solder termination type ensures secure and reliable connections.

Frame Rate: 8 fps

Decent frame rate for capturing moving objects or videos.

Array Type: INTERLINE

Interline array type provides fast readout speeds for continuous imaging.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature allows for secure and reliable installation.

Technical Specifications

Image Sensors KAI-16070-FXA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 33 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT HAS OPTICAL FORMAT 1.37 INCH, IT HAS EXTENDED LINEAR DYNAMIC RANGE 82.5 DB

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Height:

3.61 mm

Body Length/Diameter:

47.24 mm

Dynamic Range:

70.5 dB

Frame Rate:

8 fps

Horizontal Pixel:

4864

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1.37

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

3232

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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