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AR0231AT7C00XUEA0-DPBR-E

Onsemi

AR0231AT7C00XUEA0-DPBR-E by Onsemi

Onsemi's AR0231AT7C00XUEA0-DPBR-E is a CMOS image sensor with 3um pixel size, 1208 vertical pixels, and 1928 horizontal pixels. It operates at a max supply voltage of 1.26V and has a master clock of 27MHz. Ideal for applications requiring high-resolution digital output with a dynamic range of 120dB, such as surveillance cameras or automotive vision systems.

Median Price

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Lifecycle Status

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Digiode

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Vyrian

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Flip Electronics

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Nova Conductors

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Ampacity Inc.

Singapore . 719 parts In-Stock

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$13.750

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AZTECH Wire

Italy . 623 parts In-Stock

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SupplyDigital Components

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TANS Electronics

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Continental Prestige Electronics

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Argo Parts USA

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Kulean Microsystems

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Problanco Electronics

Mexico . 2,394 parts In-Stock

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Corphita

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Bastille Electronics

Australia . 650 parts In-Stock

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UHIMA Technologies

Türkiye . 218 parts In-Stock

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Corohmni

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Overview

Capture stunning images with the AR0231AT7C00XUEA0-DPBR-E Image Sensor by Onsemi. Known for its superior quality and cutting-edge technology, Onsemi delivers top-of-the-line image sensors that are perfect for a wide range of applications. Whether you're in the automotive industry, security surveillance, or consumer electronics, this sensor offers unparalleled value, exceptional performance, and reliable results. Experience the benefits of crystal-clear imaging, high resolution, and versatile features that will take your projects to the next level. Trust Onsemi to provide you with the tools you need to stand out from the competition.

Feature Benefit Bullets

Pixel Size (um): 3

Smaller pixel size allows for higher resolution images to be captured.

Maximum Supply Voltage: 1.26 V

Efficient power usage with a low maximum supply voltage.

Master Clock: 27 MHz

Fast master clock speed enables quick data processing.

Body Width: 10 inch

Provides a compact form factor for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors are known for low power consumption and high image quality.

Body Height: 1.55 mm

Low profile design for slim devices requiring image sensors.

Package Shape or Style: RECTANGULAR

Standard rectangular package for easy mounting and integration.

Minimum Supply Voltage: 1.14 V

Allows for operation at lower voltages, reducing power consumption.

Maximum Operating Temperature: 125 °C

Wide operating temperature range for versatility in various environments.

Horizontal Pixel: 1928

High horizontal pixel count for detailed image capture.

Output Type: DIGITAL OUTPUT

Digital output for easy connectivity and compatibility with modern devices.

Minimum Operating Temperature: -40 °C

Operates reliably even in extreme cold temperatures.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

High quality terminal finish for reliable connections and durability.

Maximum Operating Current: 210 mA

Efficient current consumption for extended use without draining the battery.

Dynamic Range: 120 dB

Wide dynamic range for capturing both dark and bright parts of an image effectively.

Vertical Pixel: 1208

High vertical pixel count for detailed image capture.

Body Length/Diameter: 11 mm

Compact body size suitable for various applications.

Optical Format (inch): 1/2.7

Standard optical format for compatibility with lenses and image processing algorithms.

Termination Type: SOLDER

Secure solder termination for reliable connections.

Output Interface Type: 2-WIRE INTERFACE

Simple 2-wire interface for easy integration and communication with other devices.

Frame Rate: 60 fps

High frame rate for smooth and detailed image capture.

Array Type: LINEAR

Linear array type for efficient image sensing and processing.

Mounting Feature: SURFACE MOUNT

Surface mount capability for easy and secure device mounting.

Technical Specifications

Image Sensors AR0231AT7C00XUEA0-DPBR-E attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

LINEAR

Body Width:

10 inch

Body Height:

1.55 mm

Body Length/Diameter:

11 mm

Dynamic Range:

120 dB

Frame Rate:

60 fps

Horizontal Pixel:

1928

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

210 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2.7

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

3

Sensors or Transducers Type:

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

1208

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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