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MT9V125IA7XTC-DR1

Onsemi

MT9V125IA7XTC-DR1 by Onsemi

MT9V125IA7XTC-DR1 by Onsemi is a 640x480 CMOS image sensor with 5.60um pixel size and 71.7dB dynamic range. It operates at -40 to 85 °C, has a digital current output, and uses a 2-wire interface. Ideal for applications requiring high-quality imaging in compact devices like surveillance cameras or industrial inspection systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,859 parts In-Stock

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Digiode

USA . 999 parts In-Stock

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AZTECH Wire

Italy . 926 parts In-Stock

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$21.100

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SupplyDigital Components

Austria . 5,389 parts In-Stock

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Kulean Microsystems

USA . 4,002 parts In-Stock

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Problanco Electronics

Mexico . 2,597 parts In-Stock

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Corphita

USA . 2,033 parts In-Stock

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UHIMA Technologies

Türkiye . 157 parts In-Stock

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Corohmni

South Africa . 130 parts In-Stock

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TANS Electronics

Latvia . 118 parts In-Stock

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Overview

Capture every moment in vivid detail with the MT9V125IA7XTC-DR1 by Onsemi. As a leading manufacturer in image sensors, Onsemi delivers top-quality products that exceed expectations. Designed for a wide range of applications, this image sensor offers unparalleled clarity and precision. Unlock endless possibilities and elevate your projects with the advanced technology and unmatched performance of the MT9V125IA7XTC-DR1. Discover the difference today!

Feature Benefit Bullets

Pixel Size (um) 5.60X5.60

Offers high resolution images with precise details.

Maximum Supply Voltage 3.1 V

Allows for efficient power consumption without compromising performance.

Master Clock 27 MHz

Provides fast data processing for quick image capture.

Body Width 9 inch

Compact size for easy integration into various devices.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS technology ensures high image quality and low power consumption.

Package Shape or Style SQUARE

Easily fits into square housing for secure mounting.

Minimum Supply Voltage 2.5 V

Offers flexibility in power options for different applications.

Maximum Operating Temperature 85 °C

Can operate in high temperature environments without issues.

Output Range 15.90-26.50mA

Provides a wide range of current output options for compatibility with various systems.

Output Type DIGITAL CURRENT

Ensures accurate digital output of current for data processing.

Minimum Operating Temperature -40 °C

Can function in extremely cold conditions without malfunctioning.

Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)

Durable terminal finish for long-lasting performance.

Maximum Operating Current 55 mA

Handles high current loads for continuous operation.

Dynamic Range 71.7 dB

Captures a wide range of light intensity for detailed images.

Vertical Pixel 480

Offers high resolution in the vertical axis for clear images.

Body Length/Diameter 9 mm

Small form factor for versatile installation options.

Optical Format (inch) 1/4

Compatible with standard optical formats for easy integration.

Termination Type SOLDER

Secure solder termination for reliable connection.

Output Interface Type 2-WIRE INTERFACE

Simple 2-wire interface for easy data transfer.

Frame Rate 30 fps

Provides smooth video recording capabilities.

Array Type FRAME

Utilizes frame array for efficient image capture.

Mounting Feature SURFACE MOUNT

Easy surface mounting for quick and secure installation.

Technical Specifications

Image Sensors MT9V125IA7XTC-DR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.50-3.10 V

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

71.7 dB

Frame Rate:

30 fps

Horizontal Pixel:

640

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

55 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

5.60X5.60

Sensors or Transducers Type:

Maximum Supply Voltage:

3.1 V

Minimum Supply Voltage:

2.5 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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