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MT9V128IA3XTC-TP

Onsemi

MT9V128IA3XTC-TP by Onsemi

MT9V128IA3XTC-TP by Onsemi is a 5.6x5.6 um CMOS image sensor with 680H x 512V pixels, offering a dynamic range of 74.8 dB and operating at up to 105°C. Ideal for applications requiring a digital voltage output interface, such as frame arrays in surveillance cameras or industrial imaging systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 5,247 parts In-Stock

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Digiode

USA . 1,320 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Semicontronic

India . 886 parts In-Stock

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$3.750

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$3.656

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$3.638

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AZTECH Wire

Italy . 252 parts In-Stock

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$14.608

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Ampacity Inc.

Singapore . 1,251 parts In-Stock

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Kulean Microsystems

USA . 7,242 parts In-Stock

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TANS Electronics

Latvia . 4,315 parts In-Stock

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SupplyDigital Components

Austria . 3,955 parts In-Stock

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Corphita

USA . 1,582 parts In-Stock

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Continental Prestige Electronics

USA . 1,506 parts In-Stock

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UHIMA Technologies

Türkiye . 835 parts In-Stock

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Problanco Electronics

Mexico . 806 parts In-Stock

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Argo Parts USA

USA . 320 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Corohmni

South Africa . 100 parts In-Stock

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Overview

Capture every moment with the MT9V128IA3XTC-TP by Onsemi, a top-of-the-line image sensor that delivers unparalleled quality and precision. Manufactured by industry leader Onsemi, this sensor is perfect for a wide range of applications including security cameras, medical imaging, and industrial automation. With advanced features and cutting-edge technology, this sensor offers customers exceptional value, superior performance, and endless possibilities. Upgrade your imaging experience with the MT9V128IA3XTC-TP and see the difference for yourself.

Feature Benefit Bullets

Pixel Size (um): 5.6X5.6

Smaller pixel size allows for higher resolution images to be captured, making this image sensor ideal for applications requiring detailed images.

Maximum Supply Voltage: 1.9 V

Operates at a low maximum supply voltage, which helps in reducing power consumption and heat generation, making it energy-efficient.

Master Clock: 27 MHz

High master clock frequency enables fast data processing and image capture speed, making this image sensor suitable for real-time imaging applications.

Body Width: 9 inch

Compact body width allows for easy integration into space-constrained devices or systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology provides high sensitivity, low noise, and low power consumption, making it a reliable choice for imaging applications.

Maximum Operating Temperature: 105 °C

Wide operating temperature range allows for reliable performance in various environmental conditions, making it suitable for outdoor or industrial applications.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies interface with other digital devices, improving compatibility and ease of integration.

Frame Rate: 60 fps

High frame rate enables smooth and detailed video capture, making it perfect for applications requiring fast motion analysis or video recording.

Technical Specifications

Image Sensors MT9V128IA3XTC-TP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Dynamic Range:

74.8 dB

Frame Rate:

60 fps

Horizontal Pixel:

680

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

5.6X5.6

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

512

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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