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MT9V131C12STC-DR

Onsemi

MT9V131C12STC-DR by Onsemi

MT9V131C12STC-DR by Onsemi is a 640x480 CMOS image sensor with 5.60um pixel size and 27 MHz master clock. Ideal for digital cameras, it offers a dynamic range of 60 dB and operates at temperatures ranging from -20 to 70 °C.

Median Price

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Lifecycle Status

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In-Stock Inventory

1k+

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Vyrian

USA . 6,957 parts In-Stock

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Digiode

USA . 1,522 parts In-Stock

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AZTECH Wire

Italy . 595 parts In-Stock

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SupplyDigital Components

Austria . 8,224 parts In-Stock

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Problanco Electronics

Mexico . 6,716 parts In-Stock

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Perfect Parts

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TANS Electronics

Latvia . 2,426 parts In-Stock

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Corphita

USA . 2,138 parts In-Stock

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Corohmni

South Africa . 402 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 80 parts In-Stock

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Overview

Capture every moment with the MT9V131C12STC-DR image sensor by Onsemi. Renowned for their superior quality and reliability, Onsemi delivers cutting-edge technology in the field of image sensors. This sensor, with its high resolution and exceptional performance, is perfect for a wide range of applications, from security cameras to industrial imaging systems. Experience crystal-clear images and seamless functionality with the MT9V131C12STC-DR, providing unmatched value and versatility to customers seeking top-notch imaging solutions.

Feature Benefit Bullets

Pixel Size (um): 5.60X5.60

Larger pixel size allows for more light to be captured, resulting in better image quality and low light performance.

Maximum Supply Voltage: 3.05 V

Higher maximum supply voltage provides flexibility in power supply options and ensures stable operation.

Master Clock: 27 MHz

High master clock frequency enables fast data processing and high frame rates for smooth image capture.

Body Width: 11.43 inch

Compact body width allows for easy integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology offers high image quality, low power consumption, and a wide range of features for versatile applications.

Package Shape or Style: SQUARE

Square package shape provides a symmetrical and compact design for efficient board layout and space utilization.

Minimum Supply Voltage: 2.55 V

Lower minimum supply voltage helps in reducing power consumption and extending battery life.

Maximum Operating Temperature: 70 °C

High maximum operating temperature ensures reliable performance even in demanding environmental conditions.

Horizontal Pixel: 640

High horizontal pixel count allows for detailed image capture and sharp resolution.

Output Range: 0.20-2.60V

Wide output range provides flexibility in signal processing and compatibility with various interface standards.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and communication with external devices.

Minimum Operating Temperature: -20 °C

Low minimum operating temperature ensures usability in cold environments without compromising performance.

Maximum Operating Current: 20 mA

Low maximum operating current helps in reducing power consumption and heat generation.

Housing: CERAMIC

Ceramic housing provides durability, thermal resistance, and protection against environmental factors.

Dynamic Range: 60 dB

High dynamic range enables capturing a wide range of light intensities without losing detail in dark or bright areas.

Vertical Pixel: 480

Vertical pixel count complements the horizontal resolution for capturing high-quality images with accurate proportions.

Body Length/Diameter: 11.43 mm

Compact body length/diameter ensures space-efficient integration and mechanical compatibility with various mounting options.

Optical Format (inch): 1/4

Optical format specification provides compatibility with industry-standard lens systems for easy customization and adaptation.

Termination Type: SOLDER

Solder termination provides a reliable and robust electrical connection for long-term performance and durability.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with external devices and controllers for seamless integration.

Frame Rate: 30 fps

High frame rate ensures smooth and real-time image capture for dynamic scenes and fast-moving objects.

Array Type: FRAME

Frame array type organizes pixels in a structured grid for efficient data processing and image rendering.

Mounting Feature: SURFACE MOUNT

Surface mounting feature offers easy and secure installation on PCBs or other surfaces for reliable and compact device design.

Technical Specifications

Image Sensors MT9V131C12STC-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.3 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

60 dB

Frame Rate:

30 fps

Horizontal Pixel:

640

Housing:

CERAMIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

20 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-20 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

5.60X5.60

Sensors or Transducers Type:

Maximum Supply Voltage:

3.05 V

Minimum Supply Voltage:

2.55 V

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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