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KAF-3200-ABA-CP-AE

Onsemi

KAF-3200-ABA-CP-AE by Onsemi

The Onsemi KAF-3200-ABA-CP-AE is a CCD image sensor with 6.8X6.8 um pixel size, offering 2184 horizontal and 1472 vertical pixels. It operates b/w -60 to 60 °C, has a dynamic range of 78 dB, and spectral response of 200-1100 nm. Ideal for applications requiring high-quality imaging in industrial or scientific settings due to its full-frame array design and ceramic housing.

Median Price

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Lifecycle Status

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Digiode

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Vyrian

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Kulean Microsystems

USA . 7,414 parts In-Stock

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SupplyDigital Components

Austria . 7,064 parts In-Stock

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Problanco Electronics

Mexico . 6,897 parts In-Stock

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TANS Electronics

Latvia . 5,323 parts In-Stock

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Corphita

USA . 248 parts In-Stock

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Corohmni

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UHIMA Technologies

Türkiye . 1 parts In-Stock

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Overview

Capture every detail with the KAF-3200-ABA-CP-AE image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in all their products. This image sensor, with its high pixel resolution and wide spectral response range, is perfect for applications where precision and accuracy are essential. Whether you're in the medical field, security industry, or scientific research, this sensor offers unmatched value, benefits, and advantages to help you achieve outstanding results. Trust Onsemi for superior performance and innovation in imaging technology.

Feature Benefit Bullets

Pixel Size (um): 6.8X6.8

The small pixel size allows for high resolution images to be captured with great detail.

Maximum Supply Voltage: 15.25 V

The high maximum supply voltage ensures reliable operation and performance under varying power conditions.

Body Width: 20.19 inch

The compact body width makes this image sensor suitable for use in space-constrained applications.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors are known for their high-quality image capture and low noise, making this a reliable choice for imaging applications.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for convenient integration into different systems and setups.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage helps to optimize power consumption and efficiency.

Maximum Operating Temperature: 60 °C

The high maximum operating temperature ensures the sensor can be used in a wide range of environments without overheating.

Horizontal Pixel: 2184

The high number of horizontal pixels allows for wide and detailed image capture.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature enables the sensor to function in extreme cold conditions.

Housing: CERAMIC

The ceramic housing provides durability and thermal stability to protect the sensor components.

Dynamic Range: 78 dB

The high dynamic range allows the sensor to capture both bright and dark areas in an image accurately.

Vertical Pixel: 1472

The high number of vertical pixels helps to capture detailed images with good resolution.

Body Length/Diameter: 34.54 mm

The compact body length/diameter makes this sensor easy to handle and integrate into different systems.

Spectral Response (nm): 200-1100

The wide spectral response range allows the sensor to capture images across different wavelengths of light.

Data Rate: 15 Mbps

The high data rate enables fast and efficient transfer of image data for processing.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections for the sensor in a circuit.

Array Type: FULL FRAME

The full-frame array type provides a large image sensor area for capturing detailed and high-quality images.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount feature offers secure and stable mounting options for the sensor in different applications.

Technical Specifications

Image Sensors KAF-3200-ABA-CP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 12 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

20.19 inch

Body Length/Diameter:

34.54 mm

Data Rate:

15 Mbps

Dynamic Range:

78 dB

Horizontal Pixel:

2184

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-60 Cel

Package Shape or Style:

Pixel Size (um):

6.8X6.8

Sensors or Transducers Type:

Spectral Response (nm):

200-1100

Maximum Supply Voltage:

15.25 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1472

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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