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KAF-3200ME

Onsemi

KAF-3200ME by Onsemi

The Onsemi KAF-3200ME is a CCD image sensor with 6.8X6.8 um pixel size, offering 2184 (H) x 1472 (V) resolution and a dynamic range of 77 dB. With spectral response of 250-1100 nm, it operates at supply voltages b/w 14.5 V to 15.25 V, making it ideal for high-resolution imaging applications in various industries.

Median Price

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Lifecycle Status

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3

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1k+

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Digiode

USA . 2,447 parts In-Stock

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Vyrian

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LIBRA Elektronik GmbH

Germany . 4 parts In-Stock

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Kulean Microsystems

USA . 8,117 parts In-Stock

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Problanco Electronics

Mexico . 6,506 parts In-Stock

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SupplyDigital Components

Austria . 6,413 parts In-Stock

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TANS Electronics

Latvia . 4,722 parts In-Stock

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UHIMA Technologies

Türkiye . 414 parts In-Stock

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Corohmni

South Africa . 320 parts In-Stock

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Corphita

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Overview

Capture the essence of every moment with the KAF-3200ME by Onsemi, a high-quality image sensor that delivers unparalleled performance. Manufactured by a trusted industry leader, this sensor is designed to exceed expectations in various applications. With its advanced technology and innovative features, the KAF-3200ME offers customers unmatched value and benefits. Elevate your imaging experience with this exceptional product and unlock a world of possibilities.

Feature Benefit Bullets

Pixel Size (um): 6.8X6.8

The small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 15.25 V

Operating at a higher supply voltage allows for better signal-to-noise ratio and optimal performance.

Body Width: 20.44 inch

The compact body width makes the sensor suitable for fitting into various devices without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD image sensors are known for their high-quality image capture and low noise characteristics, making this product suitable for applications requiring excellent image quality.

Body Height: 4.82 mm

The low body height allows for a slim design and easy integration into devices with limited space.

Package Shape or Style: RECTANGULAR

Rectangular packaging makes the sensor easy to mount and align in devices for accurate image capture.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage ensures efficient power consumption and prolongs battery life in portable devices.

Horizontal Pixel: 2184

A high horizontal pixel count provides excellent image resolution and clarity for detailed image capture.

Output Type: ANALOG VOLTAGE

Analog output allows for easy integration with existing systems and provides versatility in signal processing.

Dynamic Range: 77 dB

A high dynamic range enables the sensor to capture a wide range of light intensities, producing well-balanced images with accurate color reproduction.

Vertical Pixel: 1472

The vertical pixel count contributes to the overall image resolution, allowing for clear and sharp images to be captured.

Body Length/Diameter: 34.54 mm

The moderate body length provides a balance between compact design and integration flexibility in different device configurations.

Spectral Response (nm): 250-1100

The wide spectral response range allows for capturing a broad spectrum of light, making the sensor versatile for various imaging applications.

Data Rate: 45 Mbps

High data rate enables fast transmission of image data, suitable for real-time imaging and high-speed applications.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections, contributing to the sensor's durability and long-term performance.

Array Type: FULL FRAME

Full-frame array type provides maximum image sensor coverage, resulting in high-quality images with consistent brightness across the entire frame.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature simplifies the installation process and ensures secure attachment of the sensor in devices for stable image capture.

Technical Specifications

Image Sensors KAF-3200ME attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY 20 UV/ELECTRON

Array Type:

FULL FRAME

Body Width:

20.44 inch

Body Height:

4.82 mm

Body Length/Diameter:

34.54 mm

Data Rate:

45 Mbps

Dynamic Range:

77 dB

Horizontal Pixel:

2184

Mounting Feature:

Output Type:

Package Shape or Style:

Pixel Size (um):

6.8X6.8

Sensors or Transducers Type:

Spectral Response (nm):

250-1100

Maximum Supply Voltage:

15.25 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1472

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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