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KAI-1020-AAA-JP-BA

Onsemi

KAI-1020-AAA-JP-BA by Onsemi

KAI-1020-AAA-JP-BA by Onsemi is an image sensor with 1000x1000 pixels, 7.4um pixel size, and 58dB dynamic range. Ideal for applications requiring high-resolution imaging such as industrial machine vision systems or medical imaging equipment.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,332 parts In-Stock

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Digiode

USA . 1,820 parts In-Stock

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First Choice Components Inc.

USA . 2 parts In-Stock

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Kulean Microsystems

USA . 7,316 parts In-Stock

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SupplyDigital Components

Austria . 1,937 parts In-Stock

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Corphita

USA . 1,794 parts In-Stock

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Problanco Electronics

Mexico . 1,195 parts In-Stock

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Corohmni

South Africa . 445 parts In-Stock

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TANS Electronics

Latvia . 307 parts In-Stock

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UHIMA Technologies

Türkiye . 142 parts In-Stock

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Overview

Unlock a world of high-quality imaging with the KAI-1020-AAA-JP-BA by Onsemi. As a leading manufacturer in the industry, Onsemi brings you an exceptional image sensor that is perfect for a wide range of applications. With its superior performance and reliability, this product offers customers unmatched value and benefits. Whether you're capturing stunning visuals for security systems, medical imaging, or industrial automation, the KAI-1020-AAA-JP-BA delivers outstanding results every time. Choose Onsemi for excellence in imaging technology.

Feature Benefit Bullets

Pixel Size (um) 7.4X7.4

Each pixel is relatively small, allowing for high resolution images to be captured with fine details.

Body Width 27.94 inch

The wide body width provides stability and durability to the sensor, making it suitable for various environments.

Sensors or Transducers Type

Being a CCD image sensor, it offers high-quality image capture with excellent color accuracy and low noise levels.

Body Height 3.42 mm

The low profile design allows for compact installation in devices where space is limited.

Package Shape or Style SQUARE

The square shape simplifies the integration and alignment of the sensor in different setups.

Horizontal Pixel 1000

With a high horizontal pixel count, this sensor can capture wide images with great detail.

Output Range 500mV

The output range ensures compatibility with a wide range of devices and interfaces for image data transfer.

Output Type ANALOG VOLTAGE

Analog voltage output allows for easy interfacing with analog signal processing circuits.

Dynamic Range 58 dB

The high dynamic range provides excellent contrast and detail in images captured by the sensor.

Vertical Pixel 1000

The high vertical pixel count allows for capturing detailed images with good resolution.

Body Length/Diameter 27.94 mm

The length/diameter ratio provides a balance between compactness and usability in different applications.

Spectral Response (nm) 300-1000

The broad spectral response range allows for capturing images across different wavelengths of light.

Data Rate 40 Mbps

High data rate enables fast and efficient transfer of image data for real-time applications.

Termination Type SOLDER

Solder termination provides a secure and reliable connection for long-term use in various devices.

Array Type INTERLINE

Interline array design minimizes blooming effects, resulting in high-quality images with reduced artifacts.

Mounting Feature THROUGH HOLE MOUNT

Through hole mounting allows for secure installation of the sensor on PCBs or other surfaces for stable operation.

Technical Specifications

Image Sensors KAI-1020-AAA-JP-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY 12 UV/ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

27.94 inch

Body Height:

3.42 mm

Body Length/Diameter:

27.94 mm

Data Rate:

40 Mbps

Dynamic Range:

58 dB

Horizontal Pixel:

1000

Mounting Feature:

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Spectral Response (nm):

300-1000

Termination Type:

SOLDER

Vertical Pixel:

1000

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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