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KAI-11002-AAA-CP-AE

Onsemi

KAI-11002-AAA-CP-AE by Onsemi

KAI-11002-AAA-CP-AE by Onsemi is an image sensor with 9x9 um pixel size, 4008 horizontal pixels, and 2672 vertical pixels. It operates b/w -50 to 70 °C and has a dynamic range of 66 dB. Ideal for applications requiring high-resolution imaging in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,337 parts In-Stock

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Digiode

USA . 255 parts In-Stock

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Problanco Electronics

Mexico . 3,516 parts In-Stock

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SupplyDigital Components

Austria . 2,995 parts In-Stock

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Corphita

USA . 2,311 parts In-Stock

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TANS Electronics

Latvia . 2,116 parts In-Stock

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Kulean Microsystems

USA . 1,743 parts In-Stock

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Corohmni

South Africa . 167 parts In-Stock

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UHIMA Technologies

Türkiye . 36 parts In-Stock

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Overview

Discover the unparalleled imaging capabilities of the KAI-11002-AAA-CP-AE by Onsemi, a cutting-edge Image Sensor that sets new standards in quality and performance. Manufactured by the renowned Onsemi, this sensor is designed to deliver exceptional results across a variety of applications. With a pixel size of 9x9 um and a maximum supply voltage of 15.5V, this sensor offers unmatched precision and reliability. Whether you're capturing stunning photography or enhancing security systems, the KAI-11002-AAA-CP-AE guarantees superior image quality and advanced functionality. Upgrade your projects with this innovative sensor and experience the difference it makes.

Feature Benefit Bullets

Pixel Size (um): 9X9

Small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 15.5 V

Allows for efficient power supply management and compatibility with a wide range of power sources.

Body Width: 32.89 inch

Compact size for easy integration into a variety of devices or systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors offer high-quality imaging with low noise levels, suitable for various applications including high-end photography.

Body Height: 5.97 mm

Low profile design for space-saving installation in compact electronic devices.

Package Shape or Style: RECTANGULAR

Traditional rectangular shape for easy handling and mounting in standard configurations.

Minimum Supply Voltage: 14.5 V

Wide range of supply voltage options for flexibility in power input requirements.

Maximum Operating Temperature: 70 °C

High operating temperature range for reliable performance in various environmental conditions.

Horizontal Pixel: 4008

High horizontal pixel count for detailed and wide-angle image capture.

Minimum Operating Temperature: -50 °C

Low operating temperature limit allows for use in cold environments without performance degradation.

Housing: CERAMIC

Durable ceramic material for long-lasting and reliable housing of the image sensor.

Dynamic Range: 66 dB

Good dynamic range for capturing both bright and dark areas in the same image with detail.

Vertical Pixel: 2672

High vertical pixel count for detailed image capture with good resolution.

Body Length/Diameter: 44.45 mm

Optimal size for easy integration and compatibility with various mounting setups.

Data Rate: 28 Mbps

High data rate for fast and efficient image transfer and processing.

Termination Type: SOLDER

Solder termination for secure and reliable connection to other electronic components or circuitry.

Array Type: INTERLINE

Interline array design for improved image quality and reduced light leakage between pixels.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting for easy and secure installation in a variety of devices or systems.

Technical Specifications

Image Sensors KAI-11002-AAA-CP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 13 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT HAS 1.37 INCH OPTICAL FORMAT

Array Type:

INTERLINE

Body Width:

32.89 inch

Body Height:

5.97 mm

Body Length/Diameter:

44.45 mm

Data Rate:

28 Mbps

Dynamic Range:

66 dB

Horizontal Pixel:

4008

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2672

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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