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CYII4SM1300AA-HBC

Onsemi

CYII4SM1300AA-HBC by Onsemi

CYII4SM1300AA-HBC by Onsemi is a 7x7 um CMOS image sensor with 1280 horizontal pixels and 1024 vertical pixels. It operates at a max supply voltage of 5V, has a dynamic range of 69 dB, and outputs digital voltage from 1-4.50V. This sensor is ideal for applications requiring high-resolution imaging in devices such as cameras and surveillance systems.

Median Price

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Lifecycle Status

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2

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< 1k

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Vyrian

USA . 414 parts In-Stock

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Digiode

USA . 367 parts In-Stock

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Native Components

USA . 469 parts In-Stock

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$32.690

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Northwest PG Solutions

USA . 1,543 parts In-Stock

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TANS Electronics

Latvia . 2,794 parts In-Stock

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Problanco Electronics

Mexico . 2,671 parts In-Stock

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SupplyDigital Components

Austria . 1,434 parts In-Stock

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Kulean Microsystems

USA . 1,172 parts In-Stock

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Corphita

USA . 1,066 parts In-Stock

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Corohmni

South Africa . 349 parts In-Stock

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UHIMA Technologies

Türkiye . 270 parts In-Stock

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Overview

Elevate your imaging experience with the CYII4SM1300AA-HBC by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality image sensors that are trusted by professionals worldwide. The CYII4SM1300AA-HBC offers unparalleled performance and reliability, making it ideal for a wide range of applications in fields such as security, automotive, and industrial vision systems. With its advanced features and cutting-edge technology, this image sensor guarantees clear and precise images, providing exceptional value and benefits to our customers. Experience the difference with Onsemi's CYII4SM1300AA-HBC – where innovation meets excellence.

Feature Benefit Bullets

Pixel Size (um) - 7X7

With a small pixel size of 7X7 um, this image sensor can capture detailed images with high resolution.

Maximum Supply Voltage - 5 V

Operating at a maximum supply voltage of 5 V allows for compatibility with a wide range of electronic systems.

Master Clock - 10 MHz

The fast master clock speed of 10 MHz enables quick data processing and high frame rates.

Sensors or Transducers Type - IMAGE SENSOR,CMOS

Being a CMOS image sensor ensures low power consumption and high sensitivity, resulting in efficient image capture.

Vertical Pixel - 1024

With a vertical pixel count of 1024, this image sensor can capture images with good detail and sharpness in the vertical direction.

Output Range - 1-4.50V

The wide output range of 1-4.50V provides flexibility in signal processing and allows for adjustment of image parameters.

Dynamic Range - 69 dB

A high dynamic range of 69 dB ensures that this image sensor can capture both bright and dark areas in a scene with minimal loss of detail.

Optical Format (inch) - 10

With an optical format of 10 inches, this image sensor is suitable for capturing images with a large field of view.

Frame Rate - 23 fps

The frame rate of 23 fps allows for smooth video recording and fast image capture, making this sensor ideal for applications requiring real-time imaging.

Array Type - FULL FRAME

The full-frame array type ensures that the entire image sensor surface is utilized for capturing images, resulting in high-quality and uniform image output.

Technical Specifications

Image Sensors CYII4SM1300AA-HBC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FULL FRAME

Body Height:

.71 mm

Data Rate:

10 Mbps

Dynamic Range:

69 dB

Frame Rate:

23 fps

Horizontal Pixel:

1280

Housing:

CERAMIC

Master Clock:

10 MHz

Mounting Feature:

Optical Format (inch):

10

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

7X7

Sensitivity (V/lx.s):

7 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

5 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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