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CYII4SM6600AB-QDC

Onsemi

CYII4SM6600AB-QDC by Onsemi

Onsemi's CYII4SM6600AB-QDC is a 3.5x3.5 um CMOS image sensor with 2210H x 3002V pixels, operating at 40 MHz clock speed. It offers a digital voltage output range of 0.50-2.80V and features a full-frame array design, suitable for applications requiring high sensitivity and dynamic range in imaging systems.

Median Price

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Digiode

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Vyrian

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Connector Distribution Corp

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Right Parts Inc.

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Native Components

USA . 660 parts In-Stock

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Northwest PG Solutions

USA . 1,833 parts In-Stock

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TANS Electronics

Latvia . 3,445 parts In-Stock

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Kulean Microsystems

USA . 3,414 parts In-Stock

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Problanco Electronics

Mexico . 1,585 parts In-Stock

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SupplyDigital Components

Austria . 1,192 parts In-Stock

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Corphita

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Corohmni

South Africa . 459 parts In-Stock

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UHIMA Technologies

Türkiye . 84 parts In-Stock

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Overview

Elevate your imaging experience with the CYII4SM6600AB-QDC by Onsemi. Crafted with precision and expertise, this image sensor offers unparalleled quality and performance. Ideal for a wide range of applications, from industrial to consumer electronics, this cutting-edge technology provides crystal-clear images with incredible detail. Experience the value and benefits of superior image quality, reliability, and versatility that only Onsemi can deliver. Upgrade your imaging solutions with the CYII4SM6600AB-QDC and see the world in a whole new light.

Feature Benefit Bullets

Pixel Size (um): 3.5X3.5

Smaller pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage: 3.3 V

Allows for efficient power usage and compatibility with standard voltage supplies.

Master Clock: 40 MHz

High clock speed enables fast data processing and image capture.

Body Width: 24.13 inch

Compact size for easy integration into various devices and applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer high image quality, low power consumption, and fast data readout.

Body Height: 3.04 mm

Low profile design for versatile mounting options and space-saving installation.

Package Shape or Style: SQUARE

Square shape simplifies handling and assembly for efficient manufacturing processes.

Minimum Supply Voltage: 2.5 V

Allows for flexibility in power supply options and lower power consumption.

Maximum Operating Temperature: 65 °C

Wide temperature range for reliable operation in various environments.

Horizontal Pixel: 2210

High pixel count for detailed and sharp images with accurate color representation.

Output Range: 0.50-2.80V

Wide output range for flexibility in signal processing and compatibility with different systems.

Output Type: DIGITAL VOLTAGE

Digital output simplifies data processing and integration with digital devices.

Minimum Operating Temperature: -30 °C

Wide temperature range for reliable operation in extreme cold conditions.

Maximum Operating Current: 80 mA

Low operating current for energy-efficient performance and extended battery life.

Housing: CERAMIC

Ceramic housing provides durability, thermal stability, and protection for sensitive components.

Dynamic Range: 59 dB

High dynamic range for capturing clear images with both bright and dark areas well-exposed.

Vertical Pixel: 3002

High pixel count for detailed vertical resolution, enhancing image quality.

Body Length/Diameter: 24.13 mm

Compact size for easy integration and versatile mounting options.

Data Rate: 40 Mbps

High data rate for fast data transmission and real-time image capture.

Termination Type: SOLDER

Solder termination for secure and reliable connections in a variety of applications.

Output Interface Type: 3-WIRE INTERFACE

3-wire interface for easy connectivity and compatibility with different systems.

Frame Rate: 5 fps

Decent frame rate for capturing real-time motion and dynamic scenes.

Array Type: FULL FRAME

Full-frame array for capturing high-quality images with maximum sensor coverage.

Sensitivity (V/lx.s): 4.83 V/lx.s

High sensitivity for capturing clear and detailed images even in low-light conditions.

Mounting Feature: SURFACE MOUNT

Surface mount design for easy installation and integration into compact devices.

Technical Specifications

Image Sensors CYII4SM6600AB-QDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FULL FRAME

Body Width:

24.13 inch

Body Height:

3.04 mm

Body Length/Diameter:

24.13 mm

Data Rate:

40 Mbps

Dynamic Range:

59 dB

Frame Rate:

5 fps

Horizontal Pixel:

2210

Housing:

CERAMIC

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Current:

80 mA

Maximum Operating Temperature:

65 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1

Output Interface Type:

3-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.5X3.5

Sensitivity (V/lx.s):

4.83 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

3.3 V

Minimum Supply Voltage:

2.5 V

Termination Type:

SOLDER

Vertical Pixel:

3002

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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