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CYII5SM1300AA-HBC

Onsemi

CYII5SM1300AA-HBC by Onsemi

Onsemi's CYII5SM1300AA-HBC is a 6.7x6.7 um CMOS image sensor with 40 MHz master clock, ideal for full-frame applications. It operates at 3-3.6V, offers a dynamic range of 64 dB, and outputs digital voltage from 0.50-2.20V at a frame rate of 27 fps, making it suitable for high-resolution imaging in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,220 parts In-Stock

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Vyrian

USA . 688 parts In-Stock

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688

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Distributors (Availability)

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Native Components

USA . 366 parts In-Stock

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$13.470

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366

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Northwest PG Solutions

USA . 1,160 parts In-Stock

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$14.817

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$13.335

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SupplyDigital Components

Austria . 7,795 parts In-Stock

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Problanco Electronics

Mexico . 4,649 parts In-Stock

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Kulean Microsystems

USA . 4,513 parts In-Stock

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TANS Electronics

Latvia . 1,279 parts In-Stock

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UHIMA Technologies

Türkiye . 713 parts In-Stock

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Corohmni

South Africa . 230 parts In-Stock

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Corphita

USA . 227 parts In-Stock

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Overview

Experience unparalleled quality and innovation with the CYII5SM1300AA-HBC by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge image sensors that redefine possibilities in various applications. From capturing stunning visuals to ensuring precise measurements, this sensor offers unrivaled performance and reliability. Elevate your projects with the CYII5SM1300AA-HBC and discover the true value it brings to your creations.

Feature Benefit Bullets

Pixel Size (um) 6.7X6.7

The small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage 3.6 V

The higher supply voltage enables efficient performance and power management.

Master Clock 40 MHz

The high master clock frequency ensures fast data processing and high frame rates.

Body Width 15.24 inch

The compact body width makes the sensor suitable for integration into various devices and applications.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption and high image quality, making them a popular choice in digital cameras and other imaging devices.

Body Height 2.25 mm

The low body height allows for a slim and sleek design in the final product.

Package Shape or Style SQUARE

The square package shape provides easy mounting and alignment during the manufacturing process.

Minimum Supply Voltage 3 V

The low minimum supply voltage ensures compatibility with a wide range of power sources.

Maximum Operating Temperature 50 °C

The high operating temperature range allows the sensor to be used in various environmental conditions without any issues.

Output Range 0.50-2.20V

The wide output range provides flexibility in terms of signal processing and interpretation.

Output Type DIGITAL VOLTAGE

The digital output voltage simplifies the interface with other digital systems and devices.

Minimum Operating Temperature 0 °C

The low minimum operating temperature ensures reliable performance even in cold environments.

Maximum Operating Current 60 mA

The low operating current consumption contributes to energy efficiency and prolonged battery life.

Housing CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed housing provides durability and protection to the sensor components.

Dynamic Range 64 dB

The high dynamic range allows the sensor to capture both bright and dark areas in a scene with details.

Body Length/Diameter 15.24 mm

The compact body length/diameter makes the sensor versatile and suitable for various applications.

Optical Format (inch) 2/3

The 2/3 inch optical format is a standard size in the industry, ensuring compatibility with a wide range of lens options.

Termination Type SOLDER

The solder termination type provides a secure and reliable electrical connection for the sensor.

Output Interface Type 3-WIRE INTERFACE

The 3-wire interface simplifies the connection and communication between the sensor and other devices.

Frame Rate 27 fps

The high frame rate enables smooth video recording and real-time imaging applications.

Array Type FULL FRAME

The full frame array type allows for efficient and accurate image capture across the entire sensor area.

Sensitivity (V/lx.s) 8.46 V/lx.s

The high sensitivity of the sensor ensures that it can capture clear and detailed images even in low light conditions.

Mounting Feature SURFACE MOUNT

The surface mounting feature makes it easy to incorporate the sensor into circuit boards and other electronic devices.

Technical Specifications

Image Sensors CYII5SM1300AA-HBC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

DUAL SHUTTER MODE

Array Type:

FULL FRAME

Body Width:

15.24 inch

Body Height:

2.25 mm

Body Length/Diameter:

15.24 mm

Dynamic Range:

64 dB

Frame Rate:

27 fps

Housing:

CERAMIC, METAL-SEALED COFIRED

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

2/3

Output Interface Type:

3-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6.7X6.7

Sensitivity (V/lx.s):

8.46 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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