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CYII4SE6600AB-QFCH

Onsemi

CYII4SE6600AB-QFCH by Onsemi

CYII4SE6600AB-QFCH by Onsemi is an image sensor with 3.5x3.5 um pixel size, 40 MHz master clock, and 2210 horizontal pixels. Ideal for applications requiring a digital voltage output interface, such as surveillance cameras or industrial imaging systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,393 parts In-Stock

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Vyrian

USA . 1,989 parts In-Stock

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Native Components

USA . 158 parts In-Stock

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$0.761

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Northwest PG Solutions

USA . 1,443 parts In-Stock

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$0.837

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Kulean Microsystems

USA . 7,595 parts In-Stock

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Problanco Electronics

Mexico . 7,510 parts In-Stock

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TANS Electronics

Latvia . 2,894 parts In-Stock

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Corphita

USA . 764 parts In-Stock

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Corohmni

South Africa . 344 parts In-Stock

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UHIMA Technologies

Türkiye . 227 parts In-Stock

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SupplyDigital Components

Austria . 223 parts In-Stock

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Overview

Elevate your imaging experience with the CYII4SE6600AB-QFCH Image Sensor from Onsemi. Crafted with precision and cutting-edge technology, this sensor boasts unparalleled quality and reliability. Ideal for a wide range of applications, this CMOS image sensor offers exceptional clarity and detail in every frame. With a sleek square package style and advanced features like a 3-wire interface and full-frame array type, this sensor delivers outstanding performance. Transform your projects with the CYII4SE6600AB-QFCH and capture moments with unmatched precision and accuracy.

Feature Benefit Bullets

Pixel Size (um): 3.5X3.5

The small pixel size allows for high resolution images to be captured with great detail.

Maximum Supply Voltage: 3.3 V

Provides a stable power source for the image sensor to function properly.

Master Clock: 40 MHz

Ensures fast and efficient image processing.

Body Width: 24.13 inch

Compact size for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology provides high-quality image capture and low power consumption.

Body Height: 3.04 mm

Slim profile for versatile installation options.

Package Shape or Style: SQUARE

Sleek and modern design for a visually appealing product.

Minimum Supply Voltage: 2.5 V

Allows for operation in a wider range of voltage conditions.

Maximum Operating Temperature: 65 °C

Can withstand high temperature environments without compromising performance.

Horizontal Pixel: 2210

High horizontal pixel count for detailed and sharp images.

Output Range: 0.50-2.80V

Provides a wide range of output voltages for flexibility in signal processing.

Output Type: DIGITAL VOLTAGE

Digital output for easy integration with digital systems.

Minimum Operating Temperature: -30 °C

Capable of operating in cold temperature environments.

Maximum Operating Current: 80 mA

Efficient power consumption for longer battery life in portable devices.

Housing: CERAMIC

Durable and reliable housing material for longevity of the product.

Dynamic Range: 59 dB

Wide dynamic range for capturing both bright and dark areas in the image.

Vertical Pixel: 3002

High vertical pixel count for high-resolution images.

Body Length/Diameter: 24.13 mm

Compact size for space-efficient installations.

Termination Type: SOLDER

Secure and reliable connection for long-term use.

Output Interface Type: 3-WIRE INTERFACE

Standard interface for easy connectivity with other devices.

Frame Rate: 5 fps

Decent frame rate for capturing smooth motion in videos or live feeds.

Array Type: FULL FRAME

Full frame array for capturing complete images without cropping.

Sensitivity (V/lx.s): 4.83 V/lx.s

High sensitivity for capturing clear images even in low light conditions.

Mounting Feature: SURFACE MOUNT

Easy surface mounting for quick and secure installation.

Technical Specifications

Image Sensors CYII4SE6600AB-QFCH attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FULL FRAME

Body Width:

24.13 inch

Body Height:

3.04 mm

Body Length/Diameter:

24.13 mm

Dynamic Range:

59 dB

Frame Rate:

5 fps

Horizontal Pixel:

2210

Housing:

CERAMIC

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Current:

80 mA

Maximum Operating Temperature:

65 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1

Output Interface Type:

3-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.5X3.5

Sensitivity (V/lx.s):

4.83 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

3.3 V

Minimum Supply Voltage:

2.5 V

Termination Type:

SOLDER

Vertical Pixel:

3002

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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