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KAI-16050-CXA-JD-AE

Onsemi

KAI-16050-CXA-JD-AE by Onsemi

The Onsemi KAI-16050-CXA-JD-AE is a 5.5x5.5 um CCD image sensor with 4896 (H) x 3264 (V) pixels, offering a dynamic range of 64 dB. It operates b/w -50 °C to 70°C and features an interline array type, suitable for applications requiring high-resolution imaging in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,965 parts In-Stock

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Vyrian

USA . 103 parts In-Stock

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Problanco Electronics

Mexico . 7,297 parts In-Stock

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SupplyDigital Components

Austria . 5,910 parts In-Stock

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TANS Electronics

Latvia . 4,469 parts In-Stock

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Kulean Microsystems

USA . 1,557 parts In-Stock

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Corphita

USA . 1,015 parts In-Stock

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Corohmni

South Africa . 401 parts In-Stock

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UHIMA Technologies

Türkiye . 96 parts In-Stock

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Overview

Capture the essence of every moment with the cutting-edge KAI-16050-CXA-JD-AE image sensor by Onsemi. Crafted with precision and expertise, this innovative device offers unparalleled image quality and clarity for a wide range of applications. Whether you're in the field of surveillance, medical imaging, or industrial automation, this sensor delivers exceptional performance in any environment. Trust in the superior technology of Onsemi to bring your vision to life with the KAI-16050-CXA-JD-AE image sensor. Experience the difference today.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size of 5.5X5.5 um allows for detailed and high-resolution image capture, making this sensor suitable for applications requiring high image quality.

Body Width: 45.34 inch

The compact body width of 45.34 mm makes this sensor easy to integrate into different systems and devices, providing flexibility in design.

Sensors or Transducers Type: IMAGE SENSOR,CCD

The use of CCD image sensor technology ensures high-quality image output with accurate color reproduction, making it ideal for applications where image clarity is essential.

Package Shape or Style: RECTANGULAR

The rectangular shape of the package allows for efficient placement and alignment within a system, optimizing space usage and facilitating installation.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this sensor is suitable for use in a variety of environments and conditions, providing reliability and performance under different temperature ranges.

Horizontal Pixel: 4896

The high horizontal pixel count of 4896 ensures sharp and detailed image capture, allowing for precise imaging in various applications such as industrial inspection or surveillance systems.

Minimum Operating Temperature: -50 °C

The ability to operate at a minimum temperature of -50 °C makes this sensor suitable for use in cold environments, ensuring consistent performance even in extreme conditions.

Dynamic Range: 64 dB

A high dynamic range of 64 dB enables the sensor to capture a wide range of light intensities accurately, resulting in images with enhanced contrast and detail.

Vertical Pixel: 3264

With 3264 vertical pixels, this sensor can produce images with high resolution and clarity, making it suitable for applications where detailed image capture is essential.

Body Length/Diameter: 47.24 mm

The compact body length/diameter of 47.24 mm makes this sensor easy to mount and integrate into different systems, providing versatility in installation.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections, preventing signal loss or interference, and ensuring stable operation of the sensor.

Array Type: INTERLINE

The interline array type provides efficient image capture and transfer, reducing image distortion and improving image quality, making this sensor suitable for applications requiring high-speed imaging.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for secure and stable attachment of the sensor to a PCB or system, ensuring precise positioning and alignment for accurate image capture.

Technical Specifications

Image Sensors KAI-16050-CXA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 34 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Length/Diameter:

47.24 mm

Dynamic Range:

64 dB

Horizontal Pixel:

4896

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Termination Type:

SOLDER

Vertical Pixel:

3264

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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