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MT9F002I12-N4000-DP1

Onsemi

MT9F002I12-N4000-DP1 by Onsemi

Onsemi's MT9F002I12-N4000-DP1 is a CMOS image sensor with 4608x3288 pixels, 1.4um pixel size, and 65.3dB dynamic range. It operates at -30 to 70°C, outputs digital voltage in the range of 0.40-1.40V, and has a frame rate of 13.7 fps. Ideal for applications requiring high-resolution imaging in compact devices like smartphones and action cameras.

Median Price

$44.630

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 70 parts In-Stock

1+ parts

$44.630

100+ parts

$41.950

1k+ parts

$37.930

10k+ parts

$37.930

70

$44.630

$41.950

$37.930

$37.930

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$37.692

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50

$37.692

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Digiode

USA . 1,568 parts In-Stock

1+ parts

$42.398

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1,568

$42.398

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Vyrian

USA . 4,433 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 303 parts In-Stock

1+ parts

$5.585

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303

$5.585

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Corohmni

South Africa . 428 parts In-Stock

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$36.199

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428

$36.199

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$36.938

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$35.461

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100

$36.938

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$35.461

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Continental Prestige Electronics

USA . 3,502 parts In-Stock

1+ parts

$37.692

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$36.938

3,502

$37.692

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$36.938

Ampacity Inc.

Singapore . 70 parts In-Stock

1+ parts

$37.940

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70

$37.940

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Corphita

USA . 195 parts In-Stock

1+ parts

$40.167

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$40.167

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SupplyDigital Components

Austria . 7,255 parts In-Stock

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Kulean Microsystems

USA . 2,550 parts In-Stock

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Argo Parts USA

USA . 1,640 parts In-Stock

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TANS Electronics

Latvia . 1,272 parts In-Stock

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UHIMA Technologies

Türkiye . 686 parts In-Stock

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686

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Problanco Electronics

Mexico . 197 parts In-Stock

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Overview

Capture high-quality images with the MT9F002I12-N4000-DP1 image sensor from Onsemi. Known for their superior manufacturing standards, Onsemi delivers top-notch products that meet and exceed industry standards. This image sensor is perfect for a wide range of applications, from surveillance cameras to industrial machinery. With its high performance capabilities and advanced features, this sensor offers exceptional value, allowing customers to achieve stunning results in their projects. Upgrade your imaging system today with the MT9F002I12-N4000-DP1 and discover the difference it can make!

Feature Benefit Bullets

Pixel Size (um): 1.40X1.40

Small pixel size allows for higher resolution images to be captured with greater detail.

Maximum Supply Voltage: 1.9 V

Efficient power usage with a relatively low maximum supply voltage.

Master Clock: 64 MHz

Fast master clock speed enables quick processing of image data.

Body Width: 10 inch

Compact body width for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors provide high image quality and low noise levels.

Output Range: 0.40-1.40V

Wide output range allows for flexible voltage output based on application needs.

Dynamic Range: 65.3 dB

High dynamic range results in clear and detailed images even in challenging lighting conditions.

Optical Format (inch): 1/2.3

Common optical format allows for compatibility with a wide range of lenses.

Frame Rate: 13.7 fps

Decent frame rate for capturing smooth and fluid video footage.

Mounting Feature: SURFACE MOUNT

Surface mount capability makes it easy to install in a variety of applications.

Technical Specifications

Image Sensors MT9F002I12-N4000-DP1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT REQUIRES ANALOG SUPPLY VOLTAGE 2.7-3.1 V

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.25 mm

Body Length/Diameter:

10 mm

Dynamic Range:

65.3 dB

Frame Rate:

13.7 fps

Horizontal Pixel:

4608

Housing:

PLASTIC

Master Clock:

64 MHz

Mounting Feature:

Maximum Operating Current:

75 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

1.40X1.40

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

3288

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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