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KAI-0340-CBA-CB-AA-SINGLE

Onsemi

KAI-0340-CBA-CB-AA-SINGLE by Onsemi

KAI-0340-CBA-CB-AA-SINGLE by Onsemi is an image sensor with 7.4x7.4 um pixel size, 640x480 resolution, and 69 dB dynamic range. Ideal for applications requiring high-quality imaging in a compact form factor, such as industrial machine vision systems or medical imaging devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,479 parts In-Stock

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2,479

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Digiode

USA . 2,180 parts In-Stock

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2,180

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Distributors (Availability)

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Kulean Microsystems

USA . 6,207 parts In-Stock

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6,207

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TANS Electronics

Latvia . 3,924 parts In-Stock

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SupplyDigital Components

Austria . 3,602 parts In-Stock

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Problanco Electronics

Mexico . 2,669 parts In-Stock

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Corphita

USA . 1,672 parts In-Stock

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Corohmni

South Africa . 252 parts In-Stock

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UHIMA Technologies

Türkiye . 193 parts In-Stock

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Overview

Discover the ultimate clarity and precision with the KAI-0340-CBA-CB-AA-SINGLE from Onsemi. As a leading manufacturer of image sensors, Onsemi delivers top-quality products for a wide range of applications. This cutting-edge image sensor offers unparalleled performance and reliability, providing customers with exceptional value and benefits. Whether you're capturing stunning visuals or enhancing security systems, this product is sure to exceed your expectations. Elevate your projects with the KAI-0340-CBA-CB-AA-SINGLE and experience the difference today.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

The small pixel size allows for high resolution images to be captured with fine detail.

Maximum Supply Voltage: 15.25 V

The high maximum supply voltage provides flexibility in power supply options.

Body Width: 12.45 inch

The compact body width makes the sensor suitable for applications with limited space.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Being a CCD image sensor, it offers high-quality images with low noise levels, making it ideal for various imaging applications.

Body Height: 5.15 mm

The low body height allows for integration into slim devices or systems.

Package Shape or Style: RECTANGULAR

The rectangular shape makes it easy to mount and align the sensor in different systems.

Minimum Supply Voltage: 14.75 V

The low minimum supply voltage ensures efficient power usage and extends the sensor's lifespan.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, the sensor can withstand environmental conditions in various applications.

Horizontal Pixel: 640

The high horizontal pixel count enables capturing detailed images with excellent clarity.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature allows the sensor to function in extreme cold environments.

Housing: CERAMIC

The ceramic housing provides durability and thermal stability for reliable performance.

Dynamic Range: 69 dB

The high dynamic range allows the sensor to capture a wide range of light intensities accurately.

Vertical Pixel: 480

The vertical pixel count contributes to capturing high-resolution images with a good level of detail.

Body Length/Diameter: 15.87 mm

The compact body length/diameter facilitates easy integration into different systems.

Optical Format (inch): 1/3

The 1/3 inch optical format offers compatibility with various lenses and imaging systems.

Termination Type: SOLDER

The solder termination type provides a reliable electrical connection for stable performance.

Array Type: INTERLINE

The interline array type enhances image quality by reducing image lag and improving overall sensor performance.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature simplifies the installation process in different applications.

Technical Specifications

Image Sensors KAI-0340-CBA-CB-AA-SINGLE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 30 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

12.45 inch

Body Height:

5.15 mm

Body Length/Diameter:

15.87 mm

Dynamic Range:

69 dB

Horizontal Pixel:

640

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1/3

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.25 V

Minimum Supply Voltage:

14.75 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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