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AR0331SRSC00XUEE0-DRBR1

Onsemi

AR0331SRSC00XUEE0-DRBR1 by Onsemi

The Onsemi AR0331SRSC00XUEE0-DRBR1 image sensor features 2.2x2.2 um pixel size, 48 MHz master clock, and 100 dB dynamic range. Ideal for applications requiring high-resolution imaging with a frame rate of 60 fps, such as surveillance cameras and automotive vision systems.

Median Price

$20.969

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$20.969

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15

$20.969

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Vyrian

USA . 8,119 parts In-Stock

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Digiode

USA . 2,137 parts In-Stock

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2,137

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VNN

France . 50 parts In-Stock

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50

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Distributors (Availability)

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AZTECH Wire

Italy . 789 parts In-Stock

1+ parts

$17.447

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789

$17.447

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Corohmni

South Africa . 201 parts In-Stock

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$20.139

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201

$20.139

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Ampacity Inc.

Singapore . 256 parts In-Stock

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$33.750

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256

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Perfect Parts

USA . 7,224 parts In-Stock

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Problanco Electronics

Mexico . 6,820 parts In-Stock

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TANS Electronics

Latvia . 6,083 parts In-Stock

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SupplyDigital Components

Austria . 3,750 parts In-Stock

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3,750

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Corphita

USA . 1,377 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$20.550

1k+ parts

$19.921

10k+ parts

$19.502

1,000

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$20.550

$19.921

$19.502

Kulean Microsystems

USA . 441 parts In-Stock

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441

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UHIMA Technologies

Türkiye . 350 parts In-Stock

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350

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Overview

Experience unparalleled image quality and precision with the AR0331SRSC00XUEE0-DRBR1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge technology that exceeds expectations. This image sensor is perfect for a wide range of applications, from security cameras to automotive systems. Offering exceptional value, reliability, and performance, the AR0331SRSC00XUEE0-DRBR1 provides customers with the advantages they need to stay ahead in today's competitive market. Choose Onsemi for top-of-the-line image sensors that ensure superior results every time.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

The small pixel size allows for high resolution imagery, making this image sensor suitable for capturing detailed images.

Maximum Supply Voltage: 1.95 V

With a higher maximum supply voltage, this image sensor can handle increased power requirements without risk of damage.

Master Clock: 48 MHz

A high master clock frequency of 48 MHz ensures fast and efficient image processing, making this image sensor ideal for capturing rapid movements.

Body Width: 9.5 inch

The compact size of the body width makes this image sensor easy to integrate into various devices without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

Being a CMOS image sensor type, this product offers low power consumption and high sensitivity, resulting in excellent image quality.

Body Height: 1.4 mm

The slim body height of this image sensor allows for flexible installation in space-constrained applications.

Package Shape or Style: SQUARE

The square package shape provides stability and ease of mounting, making this image sensor a reliable choice for different setups.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage requirement ensures energy efficiency and extends battery life, making this image sensor cost-effective to operate.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature tolerance of 85°C, this image sensor can withstand harsh environmental conditions, enhancing its durability.

Horizontal Pixel: 2048

The high horizontal pixel count of 2048 contributes to sharp and detailed image resolution, making this image sensor suitable for high-quality imaging applications.

Technical Specifications

Image Sensors AR0331SRSC00XUEE0-DRBR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE ANALOG SUPPLY VOLTAGE 2.5-3.1V, ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

9.5 inch

Body Height:

1.4 mm

Body Length/Diameter:

9.5 mm

Dynamic Range:

100 dB

Frame Rate:

60 fps

Horizontal Pixel:

2048

Housing:

PLASTIC

JESD-609 Code:

e1

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

358 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

1536

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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