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AR0323ATSB17XUEA0-DRBR-E

Onsemi

AR0323ATSB17XUEA0-DRBR-E by Onsemi

Onsemi's AR0323ATSB17XUEA0-DRBR-E is a 3x3 um CMOS image sensor with 2880H x 1080V pixels, offering a dynamic range of 120 dB. Operating at -40 to 105 °C, it has a digital voltage output interface and supports frame rates up to 45 fps. Ideal for applications requiring high-resolution imaging in compact devices.

Median Price

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Lifecycle Status

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In-Stock Inventory

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Digiode

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Vyrian

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Prism Electronics

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Native Components

USA . 39 parts In-Stock

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Northwest PG Solutions

USA . 1,041 parts In-Stock

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Problanco Electronics

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TANS Electronics

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Corphita

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SupplyDigital Components

Austria . 1,672 parts In-Stock

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Kulean Microsystems

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Perfect Parts

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UHIMA Technologies

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Corohmni

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GreenTree Electronics

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Overview

Capture stunning images with the AR0323ATSB17XUEA0-DRBR-E image sensor from Onsemi. Known for their exceptional quality and reliability, Onsemi delivers cutting-edge technology in every product they produce. This image sensor is perfect for a variety of applications, offering customers superior performance and precision. Experience the value and benefits of this sensor as it provides high-quality digital voltage output, a wide dynamic range, and a fast frame rate. Upgrade your imaging systems with the AR0323ATSB17XUEA0-DRBR-E and see the difference for yourself.

Feature Benefit Bullets

Pixel Size (um): 3X3

Small pixel size allows for high resolution imaging and detailed pictures.

Maximum Supply Voltage: 1.26 V

Low maximum supply voltage ensures efficient power consumption and reduces heat generation.

Master Clock: 64 MHz

High master clock frequency enables fast data processing and high-speed image capture.

Body Width: 11 inch

Compact body width makes the sensor suitable for integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology offers high sensitivity and low noise performance.

Body Height: 1.775 mm

Low body height allows for thin device design and easy integration.

Package Shape or Style: RECTANGULAR

Rectangular package shape facilitates easy mounting and alignment during assembly.

Minimum Supply Voltage: 1.14 V

Low minimum supply voltage ensures stable and reliable operation of the sensor.

Maximum Operating Temperature: 105 °C

Wide operating temperature range makes the sensor suitable for various environmental conditions.

Horizontal Pixel: 2880

High horizontal pixel count allows for detailed and high-resolution images.

Output Range: 0.40-2.40V

Wide output voltage range provides flexibility in signal processing and compatibility with different systems.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and reduces the need for additional analog-to-digital conversion.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature enables reliable performance even in cold environments.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Terminal finish provides good conductivity and corrosion resistance for long-term reliability.

Maximum Operating Current: 250 mA

High maximum operating current capacity allows for reliable and stable operation under load.

Housing: PLASTIC

Plastic housing offers lightweight and cost-effective solution for packaging the sensor.

Dynamic Range: 120 dB

Wide dynamic range enables capturing high-contrast scenes with accurate details in both bright and dark areas.

Vertical Pixel: 1080

High vertical pixel count allows for capturing detailed images with good resolution.

Body Length/Diameter: 13 mm

Compact body length/diameter makes the sensor suitable for small form factor devices.

Optical Format (inch): 1/2

1/2 inch optical format offers good balance between sensitivity and compact size for the sensor.

Termination Type: SOLDER

Solder termination provides reliable electrical connection and mechanical strength for the sensor.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies communication with external devices and reduces complexity of system integration.

Frame Rate: 45 fps

High frame rate enables capturing fast-moving objects with smooth and clear motion.

Array Type: FRAME

Frame array type allows for capturing entire images in a single exposure, simplifying image processing and analysis.

Mounting Feature: SURFACE MOUNT

Surface mount feature makes it easy to mount the sensor on PCBs, saving space and simplifying assembly process.

Technical Specifications

Image Sensors AR0323ATSB17XUEA0-DRBR-E attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER; IT ALSO OPERATES AT 2.8 V ANALOG NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

11 inch

Body Height:

1.775 mm

Body Length/Diameter:

13 mm

Dynamic Range:

120 dB

Frame Rate:

45 fps

Horizontal Pixel:

2880

Housing:

PLASTIC

JESD-609 Code:

e1

Master Clock:

64 MHz

Mounting Feature:

Maximum Operating Current:

250 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensors or Transducers Type:

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

1080

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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