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KAF-1603-ABA-CP-AE

Onsemi

KAF-1603-ABA-CP-AE by Onsemi

The Onsemi KAF-1603-ABA-CP-AE is a CCD image sensor with 9x9 um pixel size, offering 1536 horizontal and 1024 vertical pixels. It operates b/w -60 to 60 °C, with a dynamic range of 74 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

$1.969

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 96 parts In-Stock

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$1.969

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Digiode

USA . 675 parts In-Stock

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675

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Vyrian

USA . 289 parts In-Stock

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289

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Problanco Electronics

Mexico . 4,738 parts In-Stock

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Kulean Microsystems

USA . 4,071 parts In-Stock

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SupplyDigital Components

Austria . 3,055 parts In-Stock

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3,055

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Corphita

USA . 388 parts In-Stock

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388

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TANS Electronics

Latvia . 300 parts In-Stock

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Corohmni

South Africa . 213 parts In-Stock

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UHIMA Technologies

Türkiye . 120 parts In-Stock

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Overview

Experience unparalleled image quality and precision with the KAF-1603-ABA-CP-AE by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch Image Sensors like no other. This cutting-edge technology is perfect for a wide range of applications, from professional photography to medical imaging. Offering exceptional value, benefits, and advantages, this product guarantees superior performance and reliability, making it a must-have for any customer looking to elevate their imaging experience.

Feature Benefit Bullets

Pixel Size (um): 9X9

Small pixel size allows for higher resolution images to be captured with greater detail.

Maximum Supply Voltage: 15.5 V

Higher supply voltage allows for better sensor performance and signal processing capabilities.

Body Width: 20.19 inch

Compact body width makes it suitable for integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD image sensor technology provides high-quality image capture with low noise levels.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for easy mounting and integration.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage helps in reducing power consumption and extending battery life.

Maximum Operating Temperature: 60 °C

Wide operating temperature range enables use in various environmental conditions.

Horizontal Pixel: 1536

High horizontal pixel count provides detailed and sharp images.

Minimum Operating Temperature: -60 °C

Wide temperature range ensures functionality in extreme cold conditions.

Housing: CERAMIC

Ceramic housing provides durability and protection to the sensor components.

Dynamic Range: 74 dB

High dynamic range allows for capturing a wide range of light intensities accurately.

Vertical Pixel: 1024

Vertical pixel count contributes to the overall image resolution and quality.

Body Length/Diameter: 34.54 mm

Compact body length/diameter makes it suitable for space-constrained applications.

Data Rate: 10 Mbps

High data rate enables rapid transmission of image data for real-time processing.

Termination Type: SOLDER

Solder termination provides secure and reliable connections for seamless integration.

Array Type: FULL FRAME

Full-frame array type ensures the entire image area is utilized for capturing detailed images.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature allows for sturdy and permanent installation in various devices.

Technical Specifications

Image Sensors KAF-1603-ABA-CP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 10 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

20.19 inch

Body Length/Diameter:

34.54 mm

Data Rate:

10 Mbps

Dynamic Range:

74 dB

Horizontal Pixel:

1536

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-60 Cel

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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