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KAF-4320-AAA-JP-AE

Onsemi

KAF-4320-AAA-JP-AE by Onsemi

The Onsemi KAF-4320-AAA-JP-AE is a CCD image sensor with 24x24 um pixel size, offering a dynamic range of 87.5 dB and spectral response of 300-1200 nm. With 2084 horizontal and 2085 vertical pixels, it operates b/w -70 to 50 °C, making it ideal for high-resolution imaging applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,509 parts In-Stock

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Vyrian

USA . 1,316 parts In-Stock

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1,316

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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SupplyDigital Components

Austria . 6,684 parts In-Stock

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Kulean Microsystems

USA . 3,925 parts In-Stock

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Problanco Electronics

Mexico . 3,680 parts In-Stock

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Corphita

USA . 1,322 parts In-Stock

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TANS Electronics

Latvia . 881 parts In-Stock

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Corohmni

South Africa . 451 parts In-Stock

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UHIMA Technologies

Türkiye . 339 parts In-Stock

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Overview

Enhance your imaging solutions with the KAF-4320-AAA-JP-AE by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their image sensors. The KAF-4320-AAA-JP-AE offers exceptional performance, versatility, and precision, making it ideal for various applications in industries such as medical, scientific, and surveillance. Experience unparalleled value and benefits with this cutting-edge product, designed to elevate your projects to new heights. Choose Onsemi for superior image sensor technology that delivers outstanding results every time.

Feature Benefit Bullets

Pixel Size (um): 24X24

A smaller pixel size allows for higher resolution images to be captured, making this image sensor a good choice for applications requiring detailed images.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high image quality and low noise characteristics, making this image sensor a good choice for capturing clear and sharp images.

Maximum Operating Temperature: 50 °C

The high maximum operating temperature ensures that this image sensor can be used in a wide range of environments without overheating, making it a reliable choice for various applications.

Minimum Operating Temperature: -70 °C

The low minimum operating temperature allows this image sensor to operate in extremely cold environments, making it suitable for applications in harsh conditions.

Dynamic Range: 87.5 dB

A high dynamic range allows this image sensor to capture both bright and dark areas in a scene with detail, making it a good choice for applications requiring accurate and detailed image capture.

Vertical Pixel: 2085

The high vertical pixel count enables this image sensor to capture high-resolution images with greater detail, making it suitable for applications where image clarity is essential.

Spectral Response (nm): 300-1200

A broad spectral response range allows this image sensor to capture a wide range of colors and wavelengths, making it versatile for various imaging applications.

Data Rate: 3 Mbps

A high data rate enables this image sensor to transmit image data quickly and efficiently, making it suitable for applications requiring real-time image processing or high-speed image capture.

Termination Type: SOLDER

The solder termination type provides a secure and reliable connection for this image sensor, ensuring stable performance and durability in various operating conditions.

Array Type: FULL FRAME

A full-frame array design allows this image sensor to capture images with a larger field of view and higher resolution, making it ideal for applications requiring comprehensive image coverage.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy and secure installation of this image sensor onto a circuit board or mounting surface, making it convenient for integration into various devices or systems.

Technical Specifications

Image Sensors KAF-4320-AAA-JP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 10 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Data Rate:

3 Mbps

Dynamic Range:

87.5 dB

Horizontal Pixel:

2084

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-70 Cel

Pixel Size (um):

24X24

Sensors or Transducers Type:

Spectral Response (nm):

300-1200

Termination Type:

SOLDER

Vertical Pixel:

2085

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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