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AR0239ATSC00XUEA0-DRBR-E

Onsemi

AR0239ATSC00XUEA0-DRBR-E by Onsemi

Onsemi's AR0239ATSC00XUEA0-DRBR-E is a 3x3 um CMOS image sensor with 1936H x 1188V pixels, offering a dynamic range of 128 dB. It operates at -40 to 105 °C, with a max supply voltage of 1.26 V and output range of 0.40-2.50V. Ideal for applications requiring high-resolution imaging at up to 90 fps frame rate.

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Digiode

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Prism Electronics

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Native Components

USA . 991 parts In-Stock

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Northwest PG Solutions

USA . 1,033 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

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SupplyDigital Components

Austria . 4,420 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

USA . 3,083 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 277 parts In-Stock

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Corohmni

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Overview

Capture stunning images with the AR0239ATSC00XUEA0-DRBR-E image sensor from Onsemi. As a leader in quality manufacturing, Onsemi delivers superior products that meet the highest industry standards. This Image Sensor is perfect for a wide range of applications, from automotive to security cameras. With its impressive dynamic range and high frame rate, this sensor ensures exceptional image quality and clarity. Experience the value and benefits that this top-of-the-line product brings to your projects, providing you with cutting-edge technology and reliable performance every time.

Feature Benefit Bullets

Pixel Size (um) 3X3

Small pixel size allows for higher resolution and better image quality.

Maximum Supply Voltage 1.26 V

Low power consumption and efficient operation.

Master Clock 27 MHz

High clock speed enables fast data processing and image capture.

Body Width 9 inch

Compact size for easy integration into various devices.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS sensor for high sensitivity and low noise performance.

Package Shape or Style SQUARE

Square package design for easy mounting and alignment.

Minimum Supply Voltage 1.14 V

Low minimum supply voltage for efficient power management.

Maximum Operating Temperature 105 °C

Wide operating temperature range for versatile applications.

Horizontal Pixel 1936

High horizontal pixel count for detailed image capture.

Output Range 0.40-2.50V

Wide output range for flexible signal processing.

Output Type DIGITAL VOLTAGE

Digital output for easy connectivity and compatibility with other devices.

Minimum Operating Temperature -40 °C

Low minimum operating temperature for use in extreme environments.

Maximum Operating Current 75 mA

Low operating current for energy-efficient operation.

Housing PLASTIC

Durable plastic housing for protection and lightweight design.

Dynamic Range 128 dB

High dynamic range for capturing both bright and dark areas in the image.

Vertical Pixel 1188

High vertical pixel count for detailed image resolution.

Body Length/Diameter 9 mm

Compact body size for easy placement and integration.

Optical Format (inch) 1/2.7

Standard optical format for compatibility with various lenses.

Termination Type SOLDER

Solder termination for secure and reliable electrical connections.

Output Interface Type 2-WIRE INTERFACE

2-wire interface for easy communication with external devices.

Frame Rate 90 fps

High frame rate for smooth and sharp image capture.

Array Type FRAME

Frame array design for efficient data processing and image capture.

Mounting Feature SURFACE MOUNT

Surface mount feature for easy installation on PCBs.

Technical Specifications

Image Sensors AR0239ATSC00XUEA0-DRBR-E attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER; IT ALSO OPERATES AT 2.8 V ANALOG NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.55 mm

Body Length/Diameter:

9 mm

Dynamic Range:

128 dB

Frame Rate:

90 fps

Horizontal Pixel:

1936

Housing:

PLASTIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

75 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2.7

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensors or Transducers Type:

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Termination Type:

SOLDER

Vertical Pixel:

1188

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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