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MT9V024IA7XTR-TR

Onsemi

MT9V024IA7XTR-TR by Onsemi

MT9V024IA7XTR-TR by Onsemi is a CMOS image sensor with 6x6 um pixel size, 752 horizontal pixels, and 480 vertical pixels. It operates at a max supply voltage of 3.6V and has a master clock of 27 MHz. Ideal for applications requiring high-resolution imaging in devices such as cameras and surveillance systems.

Median Price

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Lifecycle Status

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3

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1k+

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AZTECH Wire

Italy . 631 parts In-Stock

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SupplyDigital Components

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Kulean Microsystems

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Problanco Electronics

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Corphita

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UHIMA Technologies

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Corohmni

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Overview

Capture vivid images with the MT9V024IA7XTR-TR Image Sensor by Onsemi. Known for their superior quality and reliability, Onsemi's sensors are trusted by professionals worldwide. Designed for a wide range of applications, this sensor offers exceptional value with its high performance and advanced features. Whether you're capturing stunning landscapes or fast-moving subjects, this sensor delivers crystal-clear images with outstanding detail. Upgrade your imaging experience with the MT9V024IA7XTR-TR and discover the difference today!

Feature Benefit Bullets

Pixel Size (um): 6X6

With a small pixel size of 6x6 um, this image sensor can capture detailed images with high resolution, making it suitable for applications where image quality is crucial.

Maximum Supply Voltage: 3.6 V

The higher maximum supply voltage ensures stable and reliable performance of the image sensor, making it suitable for a wide range of operating conditions.

Master Clock: 27 MHz

The high master clock frequency of 27 MHz allows for fast image processing and frame rates, making this image sensor ideal for real-time imaging applications.

Body Width: 9 inch

The compact body width of 9 inches allows for easy integration of the image sensor into various devices and systems, making it a versatile choice for different applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, this product offers low power consumption, high sensitivity, and fast readout speeds, making it suitable for battery-powered devices and applications requiring quick image capture.

Body Height: 1.3 mm

The low body height of 1.3 mm allows for a slim and compact design, making this image sensor suitable for applications where space is limited.

Package Shape or Style: SQUARE

The square package shape makes this image sensor easy to handle and mount, ensuring compatibility with standard mounting techniques and reducing the risk of damage during installation.

Minimum Supply Voltage: 3 V

The low minimum supply voltage requirement of 3V ensures that this image sensor can operate efficiently even in low-power environments, making it suitable for portable and battery-operated devices.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature of 105 °C, this image sensor can withstand harsh environmental conditions, making it suitable for industrial and automotive applications.

Horizontal Pixel: 752

The high horizontal pixel count of 752 enables the image sensor to capture wide-angle images with greater detail, making it suitable for applications requiring panoramic or high-resolution images.

Output Range: 0.30-3V

The wide output range of 0.30-3V allows for flexible signal processing and compatibility with a variety of signal processing circuits, making this image sensor versatile for different applications.

Output Type: DIGITAL VOLTAGE

The digital voltage output type ensures accurate and reliable signal transmission, reducing noise and interference in the signal, making this image sensor suitable for high-quality imaging applications.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature of -40 °C, this image sensor can operate in extreme cold environments, making it suitable for outdoor and low-temperature applications.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin, silver, and copper provides corrosion resistance and ensures long-term reliability of the image sensor connections, making it suitable for long-lasting applications.

Maximum Operating Current: 60 mA

The low maximum operating current of 60 mA indicates the energy efficiency of this image sensor, making it suitable for battery-powered devices and applications requiring low power consumption.

Dynamic Range: 100 dB

With a high dynamic range of 100 dB, this image sensor can capture images with a wide range of brightness levels, making it suitable for applications requiring accurate and detailed image reproduction.

Vertical Pixel: 480

The vertical pixel count of 480 complements the high horizontal pixel count, allowing the image sensor to capture images with high resolution and clarity in both vertical and horizontal directions.

Body Length/Diameter: 9 mm

The compact body length or diameter of 9 mm ensures that this image sensor can be easily integrated into various devices and systems without taking up too much space, making it a versatile choice for different applications.

Optical Format (inch): 1/3

The optical format of 1/3 inch provides a good balance between sensor size and image quality, making this image sensor suitable for applications where high image resolution is required without sacrificing the overall size of the device.

Termination Type: SOLDER

The solder termination type allows for secure and reliable connections between the image sensor and other components, ensuring stable signal transmission and reducing the risk of signal loss or interference.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface output type offers a simple and versatile way to connect the image sensor to external devices or systems, making it easy to integrate into a wide range of applications.

Frame Rate: 60 fps

With a high frame rate of 60 fps, this image sensor can capture fast-moving subjects with smooth motion and high clarity, making it suitable for applications requiring fast image capture or video recording.

Array Type: FRAME

The frame array type allows the image sensor to capture complete images in a single frame, making it suitable for applications requiring simultaneous image capture of multiple objects or scenes.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies the installation and assembly process of this image sensor, making it easy to integrate into various devices and systems without the need for additional mounting hardware.

Technical Specifications

Image Sensors MT9V024IA7XTR-TR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

100 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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