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KAI-02050-FBA-JB-AE

Onsemi

KAI-02050-FBA-JB-AE by Onsemi

KAI-02050-FBA-JB-AE by Onsemi is an image sensor with 5.5x5.5 um pixel size, 1600 horizontal pixels, and 1200 vertical pixels. It operates b/w -50 to 70 °C and has a dynamic range of 64 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,499 parts In-Stock

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Vyrian

USA . 830 parts In-Stock

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830

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Kulean Microsystems

USA . 8,025 parts In-Stock

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8,025

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TANS Electronics

Latvia . 4,812 parts In-Stock

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SupplyDigital Components

Austria . 4,250 parts In-Stock

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Corphita

USA . 2,204 parts In-Stock

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Problanco Electronics

Mexico . 921 parts In-Stock

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Corohmni

South Africa . 216 parts In-Stock

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UHIMA Technologies

Türkiye . 63 parts In-Stock

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Overview

Unlock the power of crystal-clear imaging with the KAI-02050-FBA-JB-AE image sensor by Onsemi. Crafted with precision and expertise, this sensor offers unparalleled quality and performance in a compact design. Perfect for a wide range of applications, this sensor delivers crisp and detailed images, allowing you to capture every moment with clarity. Experience the value and benefits of superior imaging technology with the KAI-02050-FBA-JB-AE from Onsemi.

Feature Benefit Bullets

Pixel Size (um) 5.5X5.5

With a small pixel size, this image sensor can capture high-resolution images with fine details.

Maximum Supply Voltage 15.5 V

The high maximum supply voltage allows for more flexibility in powering the image sensor and can support various applications.

Body Width 20.07 inch

The compact body width makes it easy to integrate this image sensor into different devices or systems.

Sensors or Transducers Type IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality image capture and low noise levels, making this a reliable choice for imaging applications.

Package Shape or Style RECTANGULAR

The rectangular package shape allows for efficient use of space and easy placement within systems.

Minimum Supply Voltage 14.5 V

The low minimum supply voltage helps in reducing power consumption and operating costs for the device.

Maximum Operating Temperature 70 °C

With a high maximum operating temperature, this image sensor can withstand and perform well in various environmental conditions.

Horizontal Pixel 1600

The high horizontal pixel count allows for detailed image capture and better image quality.

Minimum Operating Temperature -50 °C

The low minimum operating temperature ensures that this image sensor can function reliably even in extreme cold conditions.

Dynamic Range 64 dB

A high dynamic range enables the image sensor to capture a wide range of brightness levels accurately, resulting in more detailed images.

Vertical Pixel 1200

The vertical pixel count contributes to the overall resolution and sharpness of the images captured by this sensor.

Body Length/Diameter 33.02 mm

The compact body length/diameter allows for easy integration and installation of this image sensor in various devices or systems.

Optical Format (inch) 2/3

The 2/3 inch optical format offers compatibility with a wide range of lenses, making it versatile for different imaging needs.

Termination Type SOLDER

The solder termination type ensures a secure and reliable connection for the image sensor, reducing the risk of malfunction or disconnection.

Array Type INTERLINE

The interline array type offers fast readout speeds and reduced noise, resulting in high-quality imaging performance.

Mounting Feature THROUGH HOLE MOUNT

Through-hole mounting provides a secure and stable attachment method for the image sensor, ensuring its proper alignment and functionality within a system.

Technical Specifications

Image Sensors KAI-02050-FBA-JB-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 34 MICRO VOLT PER ELECTRON; ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

20.07 inch

Body Length/Diameter:

33.02 mm

Dynamic Range:

64 dB

Horizontal Pixel:

1600

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

2/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1200

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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