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KAI-01150-CBA-JB-AE

Onsemi

KAI-01150-CBA-JB-AE by Onsemi

KAI-01150-CBA-JB-AE by Onsemi is an image sensor with 5.5x5.5 um pixel size, 1280 horizontal pixels, and 720 vertical pixels. It operates b/w -50 to 70 °C and has a dynamic range of 64 dB. Ideal for applications requiring high-resolution imaging in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,415 parts In-Stock

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Vyrian

USA . 980 parts In-Stock

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980

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Kulean Microsystems

USA . 7,971 parts In-Stock

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7,971

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Problanco Electronics

Mexico . 3,471 parts In-Stock

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TANS Electronics

Latvia . 2,719 parts In-Stock

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SupplyDigital Components

Austria . 1,148 parts In-Stock

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Corphita

USA . 1,109 parts In-Stock

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UHIMA Technologies

Türkiye . 925 parts In-Stock

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925

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Corohmni

South Africa . 315 parts In-Stock

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Overview

Unlock the full potential of your imaging solutions with the KAI-01150-CBA-JB-AE by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality image sensors that exceed expectations. This innovative product is perfect for applications in security systems, medical equipment, and industrial automation. With its advanced features and reliable performance, the KAI-01150-CBA-JB-AE offers unmatched value, benefits, and advantages to our customers. Upgrade your imaging capabilities today with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

With a small pixel size of 5.5X5.5 um, this Image Sensor can capture detailed images with high resolution.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage of 15.5 V ensures reliable and stable operation of the Image Sensor in various applications.

Body Width: 20.07 inch

The wide body width of 20.07 inches provides a larger surface area for the Image Sensor, allowing for better light capture.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Being a CCD type Image Sensor, it offers high-quality image output and low noise performance, making it suitable for professional imaging applications.

Body Height: 3.33 mm

The slim body height of 3.33 mm allows for compact integration of the Image Sensor in space-constrained devices.

Package Shape or Style: RECTANGULAR

The rectangular package shape provides a standardized form factor for easy integration into a wide range of devices.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage requirement of 14.5 V ensures power efficiency and compatibility with various power sources.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this Image Sensor can withstand higher temperature environments without performance degradation.

Horizontal Pixel: 1280

The Image Sensor boasts a high horizontal pixel count of 1280, enabling the capture of detailed and sharp images.

Output Type: DIGITAL VOLTAGE

The digital voltage output type simplifies the interface with external devices, enabling easy data transmission and processing.

Minimum Operating Temperature: -50 °C

With a minimum operating temperature of -50 °C, this Image Sensor can function in extreme cold environments without any issues.

Dynamic Range: 64 dB

The impressive dynamic range of 64 dB ensures that the Image Sensor can capture both bright and dark areas in the same scene with high fidelity.

Vertical Pixel: 720

With a vertical pixel count of 720, this Image Sensor offers a balanced resolution for capturing images in various orientations.

Body Length/Diameter: 33.02 mm

The moderate body length of 33.02 mm provides a good balance between compactness and functionality for the Image Sensor.

Optical Format (inch): 1/2

The 1/2 inch optical format offers compatibility with a wide range of lenses and optical systems, making it versatile for different imaging needs.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections for the Image Sensor, enhancing its overall durability.

Array Type: INTERLINE

The interline array type provides fast readout speeds and improved noise performance, ideal for applications requiring rapid image capture.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process of the Image Sensor on circuit boards, ensuring secure attachment.

Technical Specifications

Image Sensors KAI-01150-CBA-JB-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

INTERLINE

Body Width:

20.07 inch

Body Height:

3.33 mm

Body Length/Diameter:

33.02 mm

Dynamic Range:

64 dB

Horizontal Pixel:

1280

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1/2

Output Type:

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

720

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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