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MT9V024IA7XTC

Onsemi

MT9V024IA7XTC by Onsemi

MT9V024IA7XTC by Onsemi is a 1/3 inch CMOS image sensor with 752x480 pixels, 27 MHz master clock, and 100 dB dynamic range. Ideal for applications requiring high-quality digital imaging such as surveillance cameras, automotive vision systems, and industrial machine vision.

Median Price

$11.710

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 937 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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Digiode

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SupplyDigital Components

Austria . 7,800 parts In-Stock

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TANS Electronics

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Problanco Electronics

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Kulean Microsystems

USA . 3,854 parts In-Stock

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S.R.D Solutions

India . 1,200 parts In-Stock

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Corphita

USA . 802 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

USA . 610 parts In-Stock

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Corohmni

South Africa . 268 parts In-Stock

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UHIMA Technologies

Türkiye . 65 parts In-Stock

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Aranea Global

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Overview

Capture every moment with the MT9V024IA7XTC image sensor by Onsemi. Known for their superior quality and reliability, Onsemi offers cutting-edge technology that excels in a variety of applications. Whether you're capturing stunning visuals for security systems, surveillance cameras, or automotive cameras, this sensor delivers unrivaled performance and exceptional value. With its impressive dynamic range and high-resolution imaging capabilities, the MT9V024IA7XTC ensures that every detail is crystal clear. Trust Onsemi to provide you with the tools you need to bring your vision to life.

Feature Benefit Bullets

Pixel Size (um) 6X6

A smaller pixel size allows for higher resolution images with greater detail.

Maximum Supply Voltage 3.6 V

Allows for efficient power usage and support for a wide range of applications.

Master Clock 27 MHz

High master clock frequency enables fast data processing and real-time image capture.

Body Width 9 inch

Compact body width makes it suitable for integration into various devices without taking up much space.

Power Supplies (V) 3.3

Optimal power supply voltage for stable performance and energy efficiency.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS image sensor technology provides high-quality image output with low power consumption.

Body Height 1.3 mm

Low profile design for easy integration in slim devices or applications where space is limited.

Package Shape or Style SQUARE

Square package shape allows for efficient placement and soldering on circuit boards.

Minimum Supply Voltage 3 V

Supports operation at lower voltages for energy-efficient performance.

Maximum Operating Temperature 105 °C

Wide operating temperature range ensures reliable performance even in harsh environmental conditions.

Horizontal Pixel 752

High horizontal pixel count provides detailed and sharp images with wide coverage.

Output Range 0.30-3V

Wide output voltage range for compatibility with various interface circuits and image processing systems.

Output Type DIGITAL VOLTAGE

Digital voltage output simplifies data processing and integration with digital systems.

Minimum Operating Temperature -40 °C

Low minimum operating temperature allows for use in cold environments without compromising performance.

Maximum Operating Current 60 mA

Low operating current for energy efficiency and reduced power consumption.

Dynamic Range 100 dB

High dynamic range ensures accurate reproduction of both bright and dark areas in images.

Vertical Pixel 480

Vertical pixel count provides balanced image resolution for capturing detailed images.

Body Length/Diameter 9 mm

Compact body length/diameter for easy integration and mounting in various devices.

Optical Format (inch) 1/3

Optimal optical format for capturing high-quality images with good resolution and clarity.

Termination Type SOLDER

Solder termination for reliable and secure connection on circuit boards.

Output Interface Type 2-WIRE INTERFACE

2-wire interface for easy and reliable communication with external systems or microcontrollers.

Frame Rate 60 fps

High frame rate enables smooth and fluid video recording and image capture.

Array Type FRAME

Frame array type for organized and efficient image capture and processing.

Mounting Feature SURFACE MOUNT

Surface mount feature for easy and secure mounting on PCBs or other surface-mounted applications.

Technical Specifications

Image Sensors MT9V024IA7XTC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

100 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Power Supplies (V):

3.3

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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