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KAE-02152-ABB-SD-EE

Onsemi

KAE-02152-ABB-SD-EE by Onsemi

The Onsemi KAE-02152-ABB-SD-EE is a 5.5x5.5um CCD image sensor with 1920x1080 pixels, offering a dynamic range of 86dB. It operates b/w -40 °C to +40°C and comes in a rectangular ceramic housing. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

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Digiode

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Kulean Microsystems

USA . 8,123 parts In-Stock

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TANS Electronics

Latvia . 6,943 parts In-Stock

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SupplyDigital Components

Austria . 4,728 parts In-Stock

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Problanco Electronics

Mexico . 4,666 parts In-Stock

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Corphita

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Corohmni

South Africa . 392 parts In-Stock

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UHIMA Technologies

Türkiye . 31 parts In-Stock

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Overview

Upgrade your imaging projects with the KAE-02152-ABB-SD-EE by Onsemi! This high-quality image sensor offers unrivaled performance and reliability, thanks to Onsemi's reputation for cutting-edge technology and innovation. Perfect for a wide range of applications in the field of image sensors, this product provides customers with exceptional value, superior benefits, and unmatched advantages. Enhance your imaging solutions with the KAE-02152-ABB-SD-EE and experience the difference today!

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for detailed and high-resolution image capture, making this product suitable for applications requiring clear and sharp images.

Body Width: 29.97 inch

The compact body width makes the image sensor easy to integrate into various devices without taking up too much space, making it versatile for different applications.

Sensors or Transducers Type: IMAGE SENSOR, CCD

The use of CCD sensor technology ensures high-quality image capture with accurate color reproduction, making it ideal for professional and demanding imaging tasks.

Body Height: 5.38 mm

The low body height allows for a slim profile design, making it suitable for applications where space is limited and a compact form factor is required.

Package Shape or Style: RECTANGULAR

The rectangular package shape is commonly used and easily mountable, making it convenient for integration into various devices and equipment.

Maximum Operating Temperature: 40 °C

The high maximum operating temperature range ensures the image sensor can withstand harsh environmental conditions, making it reliable for use in a wide range of applications.

Horizontal Pixel: 1920

The high horizontal pixel count enables high-definition image capture with fine details, making it ideal for applications that require precise imaging and detailed analysis.

Output Type: CURRENT OUTPUT

The current output type provides a stable and reliable signal output, ensuring accurate image data transmission for consistent performance in various imaging applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature range allows the image sensor to function in cold environments or during temperature fluctuations, making it suitable for outdoor and industrial applications.

Housing: CERAMIC

The ceramic housing offers durability and protection for the internal components, ensuring long-term reliability and stability in harsh operating conditions.

Dynamic Range: 86 dB

The wide dynamic range capability allows the image sensor to capture both bright and dark areas in the same frame, providing balanced exposure and detailed image quality in high-contrast scenes.

Vertical Pixel: 1080

The vertical pixel count contributes to the overall image resolution and clarity, allowing for high-quality image capture and visualization in applications that require detailed image analysis.

Body Length/Diameter: 33 mm

The moderate body length/diameter provides a balance between compact size and functionality, making the image sensor suitable for various integration options and applications.

Optical Format (inch): 2/3

The 2/3 inch optical format is a popular standard in the industry, offering compatibility with a wide range of lenses and accessories for flexible imaging solutions.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections for easy installation and integration of the image sensor into different devices and systems.

Array Type: INTERLINE

The interline array type enables fast and efficient image capture with reduced image lag, making it suitable for real-time imaging applications that require quick response and minimal delay.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount feature allows for easy and secure mounting of the image sensor onto circuit boards or mounting platforms, ensuring stable positioning and alignment for consistent performance.

Technical Specifications

Image Sensors KAE-02152-ABB-SD-EE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAVE OUTPUT SENSTIVITY OF 44 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

29.97 inch

Body Height:

5.38 mm

Body Length/Diameter:

33 mm

Dynamic Range:

86 dB

Horizontal Pixel:

1920

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

2/3

Output Type:

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Termination Type:

SOLDER

Vertical Pixel:

1080

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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