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KAE-02150-ABB-SP-EE

Onsemi

KAE-02150-ABB-SP-EE by Onsemi

The Onsemi KAE-02150-ABB-SP-EE is a 2/3 inch CCD image sensor with 1920x1080 pixels, 5.5um pixel size, and 68dB dynamic range. It operates b/w -40 to 40 °C, suitable for high-resolution imaging applications requiring high sensitivity and fast frame rates up to 60fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,778 parts In-Stock

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Digiode

USA . 1,396 parts In-Stock

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Kulean Microsystems

USA . 8,255 parts In-Stock

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SupplyDigital Components

Austria . 3,340 parts In-Stock

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TANS Electronics

Latvia . 2,944 parts In-Stock

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Corphita

USA . 1,726 parts In-Stock

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UHIMA Technologies

Türkiye . 502 parts In-Stock

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Corohmni

South Africa . 456 parts In-Stock

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Problanco Electronics

Mexico . 217 parts In-Stock

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Overview

Unlock the power of high-quality imaging with the KAE-02150-ABB-SP-EE by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge image sensors that guarantee exceptional performance and reliability. Ideal for a wide range of applications, this image sensor offers unmatched value by providing crystal-clear images with a wide dynamic range. Whether you're capturing stunning visuals for security systems, medical devices, or industrial machinery, the KAE-02150-ABB-SP-EE is the perfect choice for all your imaging needs. Elevate your projects with precision and clarity - choose Onsemi.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

Smaller pixel size results in higher resolution and better image quality.

Maximum Supply Voltage: 6 V

Allows for flexibility in power supply options.

Body Width: 29.97 inch

Compact size makes it suitable for various applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high image quality and sensitivity.

Body Height: 4.61 mm

Low profile design for easy integration into different devices.

Package Shape or Style: RECTANGULAR

Standard shape for easy mounting and installation.

Minimum Supply Voltage: 4.5 V

Low minimum supply voltage for energy efficiency.

Maximum Operating Temperature: 40 °C

Wide operating temperature range for versatility in various environments.

Horizontal Pixel: 1920

High horizontal pixel count for detailed image capture.

Minimum Operating Temperature: -40 °C

Ability to operate in extreme cold temperatures.

Housing: ALUMINIUM

Durable aluminum housing for protection and heat dissipation.

Dynamic Range: 68 dB

Wide dynamic range for capturing details in both bright and dark areas.

Vertical Pixel: 1080

High vertical pixel count for sharp and defined images.

Body Length/Diameter: 33 mm

Compact form factor for easy integration into different setups.

Optical Format (inch): 2/3

Common optical format for compatibility with various lenses.

Termination Type: SOLDER

Secure and reliable solder termination for stable connections.

Frame Rate: 60 fps

High frame rate for smooth and real-time video recording.

Array Type: INTERLINE

Interline array type for fast readout speed and reduced image lag.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting for secure and stable installation in devices.

Technical Specifications

Image Sensors KAE-02150-ABB-SP-EE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 44 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT ALSO HAVE DYNAMIC RANGE 60 AND 86 DB

Array Type:

INTERLINE

Body Width:

29.97 inch

Body Height:

4.61 mm

Body Length/Diameter:

33 mm

Dynamic Range:

68 dB

Frame Rate:

60 fps

Horizontal Pixel:

1920

Housing:

ALUMINIUM

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

2/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

6 V

Minimum Supply Voltage:

4.5 V

Termination Type:

SOLDER

Vertical Pixel:

1080

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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