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KAE-02150-FBB-JP-EE

Onsemi

KAE-02150-FBB-JP-EE by Onsemi

KAE-02150-FBB-JP-EE by Onsemi is an image sensor with 1920x1080 pixels, 5.5um pixel size, and 68dB dynamic range. It operates b/w -70 to 40 °C and has a supply voltage range of 4.5V to 6V. Ideal for applications requiring high-resolution imaging in industrial automation and surveillance systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,168 parts In-Stock

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Vyrian

USA . 196 parts In-Stock

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SupplyDigital Components

Austria . 8,185 parts In-Stock

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TANS Electronics

Latvia . 7,378 parts In-Stock

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Problanco Electronics

Mexico . 6,591 parts In-Stock

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Kulean Microsystems

USA . 2,504 parts In-Stock

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Corphita

USA . 2,177 parts In-Stock

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UHIMA Technologies

Türkiye . 806 parts In-Stock

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Corohmni

South Africa . 352 parts In-Stock

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Overview

Capture stunning images with the KAE-02150-FBB-JP-EE image sensor by Onsemi. Designed for top-notch quality and reliability, this sensor is perfect for a wide range of applications in photography, security systems, and medical imaging. With its high performance and advanced features, customers can expect nothing but exceptional results. Upgrade your imaging experience today with the KAE-02150-FBB-JP-EE.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

This small pixel size allows for high resolution imaging and detailed picture quality.

Maximum Supply Voltage: 6 V

A higher maximum supply voltage provides flexibility in power options and allows for efficient performance.

Body Width: 30 inch

The compact body width makes this image sensor suitable for various applications where space is limited.

Power Supplies (V): 15

The higher power supply voltage ensures stable and reliable operation of the image sensor.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD image sensors are known for their high-quality image capture, making this product a reliable choice for imaging needs.

Body Height: 2.53 mm

The low body height allows for easy integration and installation in devices or equipment.

Package Shape or Style: RECTANGULAR

Rectangular package shape provides a convenient form factor for mounting and placement purposes.

Minimum Supply Voltage: 4.5 V

The lower minimum supply voltage ensures energy efficiency and optimal performance under varying power conditions.

Maximum Operating Temperature: 40 °C

With a maximum operating temperature of 40 °C, this image sensor can withstand high-temperature environments.

Horizontal Pixel: 1920

The high horizontal pixel count allows for detailed and sharp images to be captured.

Minimum Operating Temperature: -70 °C

The wide range of minimum operating temperature makes this image sensor suitable for extreme cold environments.

Housing: ALUMINIUM

Aluminium housing provides durability and protection for the image sensor, ensuring longevity and reliability.

Dynamic Range: 68 dB

A high dynamic range of 68 dB allows for capturing images with a wide range of brightness levels accurately.

Vertical Pixel: 1080

The vertical pixel count contributes to the overall image resolution and quality, making it suitable for high-definition applications.

Body Length/Diameter: 33 mm

The compact body length/diameter makes this image sensor versatile and easy to integrate into different devices.

Optical Format (inch): 2/3

The 2/3 inch optical format provides compatibility with a wide range of lenses, allowing for flexibility in imaging applications.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections for the image sensor in electronic circuits.

Frame Rate: 60 fps

A high frame rate of 60 frames per second enables smooth and real-time image capture, ideal for fast-moving subjects or applications.

Array Type: INTERLINE

Interline array type offers high sensitivity and low noise performance, making it suitable for low-light imaging conditions.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature provides ease of installation and secure attachment of the image sensor to circuit boards or devices.

Technical Specifications

Image Sensors KAE-02150-FBB-JP-EE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 44 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT ALSO HAVE DYNAMIC RANGE 60 AND 86 DB

Array Type:

INTERLINE

Body Width:

30 inch

Body Height:

2.53 mm

Body Length/Diameter:

33 mm

Dynamic Range:

68 dB

Frame Rate:

60 fps

Horizontal Pixel:

1920

Housing:

ALUMINIUM

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-70 Cel

Optical Format (inch):

2/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

6 V

Minimum Supply Voltage:

4.5 V

Termination Type:

SOLDER

Vertical Pixel:

1080

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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