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KAE-02150-ABB-JP-FA

Onsemi

KAE-02150-ABB-JP-FA by Onsemi

KAE-02150-ABB-JP-FA by Onsemi is a 2/3 inch CCD image sensor with 1920x1080 pixels, 5.5um pixel size, and 68dB dynamic range. It operates b/w -70 to 40 °C, with power supply of 4.5-15V. Ideal for high-resolution imaging applications requiring high sensitivity and low noise levels.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,942 parts In-Stock

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Digiode

USA . 2,480 parts In-Stock

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AZTECH Wire

Italy . 781 parts In-Stock

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$21.850

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SupplyDigital Components

Austria . 7,642 parts In-Stock

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Problanco Electronics

Mexico . 7,312 parts In-Stock

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Kulean Microsystems

USA . 6,851 parts In-Stock

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TANS Electronics

Latvia . 4,267 parts In-Stock

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Corphita

USA . 1,635 parts In-Stock

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UHIMA Technologies

Türkiye . 436 parts In-Stock

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Corohmni

South Africa . 177 parts In-Stock

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Overview

Elevate your imaging capabilities with the KAE-02150-ABB-JP-FA by Onsemi. This cutting-edge image sensor is designed to deliver unrivaled quality and precision, thanks to Onsemi's exceptional manufacturing standards. Perfect for a wide range of applications, this sensor offers unparalleled value and benefits to customers seeking top-tier performance. Experience the advantages of superior imaging technology with the KAE-02150-ABB-JP-FA and unlock a world of possibilities in the realm of visual capture.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

This small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 6 V

The higher maximum supply voltage allows for better performance and flexibility in power management.

Body Width: 30 inch

The compact body width makes it easy to integrate this image sensor into various devices without taking up much space.

Power Supplies (V): 15

The higher power supply voltage ensures efficient and reliable operation of the image sensor.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality image capture and low noise performance, making them a great choice for professional applications.

Body Height: 2.53 mm

The low body height allows for a slim design and easy integration into compact devices.

Package Shape or Style: RECTANGULAR

The rectangular package shape provides a standardized form factor for easy mounting and compatibility with various equipment.

Minimum Supply Voltage: 4.5 V

The relatively low minimum supply voltage ensures energy efficiency and prevents power wastage.

Maximum Operating Temperature: 40 °C

The high maximum operating temperature range allows for operation in a wide range of environments and conditions.

Horizontal Pixel: 1920

The high horizontal pixel count results in sharp and detailed images with a wide field of view.

Minimum Operating Temperature: -70 °C

The low minimum operating temperature allows for reliable performance even in extremely cold conditions.

Housing: ALUMINIUM

Aluminium housing provides durability, lightweight construction, and efficient heat dissipation for optimal performance.

Dynamic Range: 68 dB

A high dynamic range ensures that the image sensor can capture both bright and dark areas accurately, resulting in high-quality images with good contrast.

Vertical Pixel: 1080

The high vertical pixel count complements the horizontal pixel count for capturing detailed images with excellent resolution.

Body Length/Diameter: 33 mm

The moderate body length/diameter provides a balance between compactness and functionality for easy integration into various applications.

Optical Format (inch): 2/3

The 2/3 inch optical format is a standard size that offers compatibility with a wide range of lenses, allowing for versatile imaging options.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection for seamless integration into electronic devices.

Frame Rate: 60 fps

The high frame rate allows for smooth and real-time image capture, ideal for applications that require fast and accurate imaging.

Array Type: INTERLINE

Interline array type ensures efficient light capture and reduced image distortion for high-quality and accurate imaging.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature offers a secure and stable installation method for the image sensor, preventing movement or misalignment during operation.

Technical Specifications

Image Sensors KAE-02150-ABB-JP-FA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 44 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT ALSO HAVE DYNAMIC RANGE 60 AND 86 DB

Array Type:

INTERLINE

Body Width:

30 inch

Body Height:

2.53 mm

Body Length/Diameter:

33 mm

Dynamic Range:

68 dB

Frame Rate:

60 fps

Horizontal Pixel:

1920

Housing:

ALUMINIUM

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-70 Cel

Optical Format (inch):

2/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

6 V

Minimum Supply Voltage:

4.5 V

Termination Type:

SOLDER

Vertical Pixel:

1080

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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