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KAE-04471-ABA-JP-FA

Onsemi

KAE-04471-ABA-JP-FA by Onsemi

The Onsemi KAE-04471-ABA-JP-FA is a 7.4x7.4 um CCD image sensor with 2096 (H) x 2096 (V) pixels, offering a dynamic range of 72 dB. Operating b/w -30 to 40 °C, it has a voltage output and supports up to 20 Mbps data rate. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

$13,637.380

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 24 parts In-Stock

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Verical

USA . 24 parts In-Stock

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$13,637.380

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24

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Digiode

USA . 1,153 parts In-Stock

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$12,955.511

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Vyrian

USA . 5,770 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 784 parts In-Stock

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$16.340

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Corphita

USA . 2,013 parts In-Stock

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$12,273.642

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Corohmni

South Africa . 451 parts In-Stock

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Kulean Microsystems

USA . 6,921 parts In-Stock

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Problanco Electronics

Mexico . 2,848 parts In-Stock

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TANS Electronics

Latvia . 2,521 parts In-Stock

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SupplyDigital Components

Austria . 2,362 parts In-Stock

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UHIMA Technologies

Türkiye . 255 parts In-Stock

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Overview

Capture stunning images with the KAE-04471-ABA-JP-FA image sensor from Onsemi. As a leader in the industry, Onsemi delivers top-quality products that exceed expectations. This sensor is perfect for a wide range of applications, offering unparalleled clarity and precision. Elevate your projects with this state-of-the-art sensor, providing exceptional value and performance that will set you apart from the competition. Choose Onsemi for reliability, innovation, and excellence.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

The small pixel size allows for high resolution images to be captured with crisp detail, making this product ideal for applications requiring clear and sharp images.

Maximum Supply Voltage: 15.3 V

The high maximum supply voltage ensures stable and reliable performance of the image sensor in various operating conditions, making it a dependable choice for different applications.

Body Width: 41 inch

The compact body width of the sensor allows for easy integration into different devices and systems without taking up too much space, making it versatile and convenient to use.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Being an image sensor with CCD technology, this product offers high-quality image capture capabilities with low noise and high sensitivity, making it suitable for demanding imaging tasks.

Package Shape or Style: RECTANGULAR

The rectangular package shape provides a standardized form factor for easy integration and compatibility with existing systems and equipment, making it a convenient choice for various applications.

Minimum Supply Voltage: 14.7 V

The low minimum supply voltage requirement ensures efficient power usage and extends the product's operating time, making it energy-efficient and cost-effective in the long run.

Maximum Operating Temperature: 40 °C

With a high maximum operating temperature, this image sensor can withstand harsh environmental conditions and function reliably in a wide range of temperatures, making it suitable for outdoor and industrial use.

Horizontal Pixel: 2096

The high horizontal pixel count allows for detailed and high-resolution image capture, making this product ideal for applications where image clarity and precision are crucial.

Output Type: VOLTAGE OUTPUT

The voltage output type facilitates easy integration with various systems and equipment, providing a straightforward way to interface and process the output signal, making it versatile and adaptable in different applications.

Minimum Operating Temperature: -30 °C

With a low minimum operating temperature, this image sensor can function effectively in cold environments or during temperature fluctuations, ensuring reliable performance in challenging conditions.

Maximum Operating Current: 9 mA

The low maximum operating current requirement helps in reducing power consumption and heat generation, making this product energy-efficient and improving its overall performance and longevity.

Dynamic Range: 72 dB

The high dynamic range of 72 dB allows this image sensor to capture a wide range of light intensities accurately, making it suitable for applications where lighting conditions vary or for capturing scenes with high contrast.

Vertical Pixel: 2096

The high vertical pixel count contributes to the overall image quality and resolution, ensuring detailed and sharp images are captured, making this product ideal for applications that require precise image reproduction.

Body Length/Diameter: 43.5 mm

The compact body length/diameter makes this image sensor easy to handle and install, while also ensuring compatibility with different mounting systems, making it user-friendly and versatile in various setups.

Optical Format (inch): 4/3

The 4/3 optical format provides a standard aspect ratio for image capture, ensuring compatibility with existing lenses and imaging systems, making this product a convenient choice for upgrading or integrating into new setups.

Data Rate: 20 Mbps

The high data rate of 20 Mbps allows for fast and efficient transfer of image data, ensuring real-time image processing and transmission, making this product suitable for applications that require quick data transfer and analysis.

Termination Type: SOLDER

The solder termination type provides a secure and reliable connection for the image sensor, ensuring stable performance and compatibility with different circuit boards and systems, making it a durable and dependable choice for long-term use.

Frame Rate: 30 fps

With a high frame rate of 30 fps, this image sensor can capture fast-moving objects or scenes with smooth motion, making it ideal for applications that require high-speed image capture and analysis.

Array Type: INTERLINE

The interline array type enables fast readout and processing of image data, reducing motion blur and improving overall image quality, making this product suitable for applications that require precise and reliable image capture.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for secure and stable installation of the image sensor onto circuit boards or mounting brackets, ensuring reliable performance and durability in different setups, making it a versatile and practical choice for various applications.

Technical Specifications

Image Sensors KAE-04471-ABA-JP-FA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC AND GLOBAL SHUTTER; DATA RATE 40 MHZ HCCD; DYNAMIC RANGE 60 AND 92 DB HIGH GAIN AND INTRA-SCENE RESPECTIVELY; SENSITIVITY 45 MICRO V/E-

Array Type:

INTERLINE

Body Width:

41 inch

Body Length/Diameter:

43.5 mm

Data Rate:

20 Mbps

Dynamic Range:

72 dB

Frame Rate:

30 fps

Horizontal Pixel:

2096

Mounting Feature:

Maximum Operating Current:

9 mA

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

4/3

Output Type:

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.3 V

Minimum Supply Voltage:

14.7 V

Termination Type:

SOLDER

Vertical Pixel:

2096

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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