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KAI-2020-FBA-CP-AE

Onsemi

KAI-2020-FBA-CP-AE by Onsemi

KAI-2020-FBA-CP-AE by Onsemi is an image sensor with 7.4x7.4 um pixel size, offering a dynamic range of 68 dB and 1600x1200 resolution. Ideal for applications requiring high-quality imaging in a compact form factor, this CCD sensor operates b/w -50 to 70 °C with supply voltage ranging from 14.5V to 15.5V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,038 parts In-Stock

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Digiode

USA . 1,057 parts In-Stock

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SupplyDigital Components

Austria . 7,731 parts In-Stock

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Kulean Microsystems

USA . 5,185 parts In-Stock

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Problanco Electronics

Mexico . 3,336 parts In-Stock

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Corphita

USA . 1,131 parts In-Stock

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TANS Electronics

Latvia . 889 parts In-Stock

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UHIMA Technologies

Türkiye . 357 parts In-Stock

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Corohmni

South Africa . 284 parts In-Stock

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Overview

Discover the superior quality and cutting-edge technology of the KAI-2020-FBA-CP-AE by Onsemi. As a leading manufacturer of image sensors, Onsemi delivers top-of-the-line products that are perfect for a wide range of applications. From industrial to medical imaging, this CCD image sensor offers unmatched performance and reliability. Unlock new possibilities with its high dynamic range and precise pixel size. Trust Onsemi to provide you with a product that exceeds your expectations and brings value to your projects. Elevate your designs with the KAI-2020-FBA-CP-AE and experience the difference.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Small pixel size allows for high resolution and detailed images to be captured.

Maximum Supply Voltage: 15.5 V

Higher supply voltage allows for better performance and signal quality.

Body Width: 20.32 inch

Compact body width makes it suitable for various applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors provide high-quality images with low noise levels.

Body Height: 4.44 mm

Low body height makes it easy to integrate into different systems.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for easy mounting and integration into different devices.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage ensures energy-efficient operation.

Maximum Operating Temperature: 70 °C

Wide operating temperature range makes it suitable for various environments.

Horizontal Pixel: 1600

High horizontal pixel count allows for detailed and high-resolution images.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature ensures operation in extreme conditions.

Housing: CERAMIC

Ceramic housing provides durability and protection to the sensor.

Dynamic Range: 68 dB

High dynamic range allows for capturing a wide range of bright and dark areas in an image.

Vertical Pixel: 1200

High vertical pixel count ensures detailed images in the vertical direction.

Body Length/Diameter: 33.02 mm

Optimal body length/diameter ratio for easy integration and space-saving design.

Termination Type: SOLDER

Solder termination ensures secure and reliable electrical connections.

Array Type: INTERLINE

Interline array type allows for high-speed image capture and reduced image lag.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature provides secure and stable mounting options.

Technical Specifications

Image Sensors KAI-2020-FBA-CP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 30 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT ALSO HAVE DYNAMIC RANGE 60 DB

Array Type:

INTERLINE

Body Width:

20.32 inch

Body Height:

4.44 mm

Body Length/Diameter:

33.02 mm

Dynamic Range:

68 dB

Horizontal Pixel:

1600

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1200

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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