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KAI-01050-ABA-JD-AE

Onsemi

KAI-01050-ABA-JD-AE by Onsemi

KAI-01050-ABA-JD-AE by Onsemi is an image sensor with 5.5x5.5 um pixel size, 1024x1024 resolution, and 64 dB dynamic range. It operates b/w -50 to 70 °C and has a max supply voltage of 15.5 V. Ideal for applications requiring high-quality digital imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,436 parts In-Stock

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Digiode

USA . 1,362 parts In-Stock

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Distributors (Availability)

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Problanco Electronics

Mexico . 7,182 parts In-Stock

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Kulean Microsystems

USA . 7,107 parts In-Stock

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TANS Electronics

Latvia . 4,871 parts In-Stock

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SupplyDigital Components

Austria . 3,316 parts In-Stock

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Corphita

USA . 1,744 parts In-Stock

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UHIMA Technologies

Türkiye . 281 parts In-Stock

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Corohmni

South Africa . 228 parts In-Stock

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Overview

Discover the unparalleled quality and innovation of the KAI-01050-ABA-JD-AE by Onsemi, a cutting-edge Image Sensor that sets the standard in the industry. With a pixel size of 5.5x5.5 um and a maximum supply voltage of 15.5 V, this sensor offers exceptional performance for a wide range of applications. Benefit from Onsemi's expertise in imaging technology and unlock new possibilities in your projects with the superior value and advantages that this product delivers. Experience the difference with the KAI-01050-ABA-JD-AE and take your imaging capabilities to the next level.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

This small pixel size allows for high resolution images to be captured by the image sensor.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage allows for flexibility in power supply options, ensuring stable performance.

Body Width: 20.07 inch

The larger body width provides room for additional features or components, enhancing the functionality of the image sensor.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensor technology is known for its high-quality image capture, making this product a reliable choice for imaging applications.

Body Height: 3.33 mm

The compact body height allows for easy integration into various devices or systems without taking up too much space.

Package Shape or Style: RECTANGULAR

Rectangular package shape is commonly used and easy to handle during installation or mounting.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage helps in reducing power consumption and heat generation, making the image sensor energy efficient.

Maximum Operating Temperature: 70 °C

High maximum operating temperature ensures compatibility with a wide range of environmental conditions, increasing the versatility of the image sensor.

Horizontal Pixel: 1024

High horizontal pixel count allows for detailed and sharp images to be produced by the image sensor.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies the interface with other digital systems, enhancing the usability of the image sensor.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature ensures reliable performance even in extreme cold environments, making this product suitable for a wide range of applications.

Dynamic Range: 64 dB

Good dynamic range allows the image sensor to capture a wide range of tones and colors accurately, resulting in high-quality images.

Vertical Pixel: 1024

High vertical pixel count complements the horizontal pixel count, further improving the quality of the images produced.

Body Length/Diameter: 33.02 mm

The body length/diameter provides a compact form factor for easy integration and compatibility with various mounting options.

Optical Format (inch): 1/2

Common optical format allows for easy compatibility with different lenses and optical systems, increasing the versatility of the image sensor.

Termination Type: SOLDER

Solder termination ensures secure connections and reliable performance, making the installation process hassle-free.

Array Type: INTERLINE

Interline array type offers fast readout speeds and reduced image lag, providing smooth and high-speed imaging performance.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature provides easy and secure mounting options, simplifying the installation process for the image sensor.

Technical Specifications

Image Sensors KAI-01050-ABA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

INTERLINE

Body Width:

20.07 inch

Body Height:

3.33 mm

Body Length/Diameter:

33.02 mm

Dynamic Range:

64 dB

Horizontal Pixel:

1024

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1/2

Output Type:

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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