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KAI-04022-ABA-CR-BA

Onsemi

KAI-04022-ABA-CR-BA by Onsemi

KAI-04022-ABA-CR-BA by Onsemi is an image sensor with 2048x2048 pixels, 7.4um pixel size, and 72dB dynamic range. It operates b/w -50 to 70 °C and has a supply voltage range of 14.5V to 15.5V. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,131 parts In-Stock

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Digiode

USA . 440 parts In-Stock

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440

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Kulean Microsystems

USA . 7,489 parts In-Stock

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7,489

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TANS Electronics

Latvia . 2,776 parts In-Stock

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SupplyDigital Components

Austria . 895 parts In-Stock

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Corphita

USA . 739 parts In-Stock

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Corohmni

South Africa . 368 parts In-Stock

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Problanco Electronics

Mexico . 266 parts In-Stock

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UHIMA Technologies

Türkiye . 58 parts In-Stock

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Overview

Experience unparalleled image quality and precision with the KAI-04022-ABA-CR-BA Image Sensor by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge technology that meets the highest standards. Ideal for a wide range of applications, this sensor offers customers exceptional value, reliability, and performance. Whether you're in the medical, automotive, or industrial sector, this sensor provides unmatched benefits and advantages, making it the perfect choice for all your imaging needs. Elevate your projects to new heights with the KAI-04022-ABA-CR-BA Image Sensor from Onsemi.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

The small pixel size allows for high resolution images to be captured with great detail.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage allows for more flexibility in powering the image sensor.

Body Width: 25.4 inch

Compact body width makes it easy to integrate this image sensor into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality image capture capabilities, making this product a reliable choice for imaging applications.

Body Height: 4.95 mm

Low profile body height allows for space-efficient installation in tight spaces.

Package Shape or Style: RECTANGULAR

Rectangular package shape makes it easy to align and mount the image sensor in a variety of orientations.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage ensures energy efficiency and reliable operation.

Maximum Operating Temperature: 70 °C

Wide operating temperature range makes this image sensor suitable for use in various environments and conditions.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and integration with digital systems.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature allows for reliable performance even in extreme cold conditions.

Housing: CERAMIC

Ceramic housing provides durability and protects the image sensor from damage.

Dynamic Range: 72 dB

High dynamic range ensures that the image sensor can capture a wide range of light intensities accurately.

Vertical Pixel: 2048

High pixel count vertically allows for high-resolution image capture.

Body Length/Diameter: 35.56 mm

Moderate body length/diameter provides a good balance between compact size and integration flexibility.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection for the image sensor.

Array Type: INTERLINE

Interline array type offers fast readout speeds and high sensitivity for efficient image capture.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature makes it easy to securely attach the image sensor to a printed circuit board or other surface.

Technical Specifications

Image Sensors KAI-04022-ABA-CR-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 33 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

25.4 inch

Body Height:

4.95 mm

Body Length/Diameter:

35.56 mm

Dynamic Range:

72 dB

Horizontal Pixel:

2048

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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