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KAI-08052-ABA-JD-AE

Onsemi

KAI-08052-ABA-JD-AE by Onsemi

KAI-08052-ABA-JD-AE by Onsemi is a 5.5x5.5 um CCD image sensor with 3296H x 2472V pixels, offering a dynamic range of 66 dB. Operating b/w -50 to 70 °C, it has a supply voltage range of 14.5V to 15.5V and comes in a rectangular package style for applications like industrial imaging and surveillance systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

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1k+

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Vyrian

USA . 961 parts In-Stock

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Digiode

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Kulean Microsystems

USA . 5,705 parts In-Stock

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SupplyDigital Components

Austria . 3,772 parts In-Stock

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TANS Electronics

Latvia . 3,693 parts In-Stock

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Problanco Electronics

Mexico . 795 parts In-Stock

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Corohmni

South Africa . 434 parts In-Stock

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UHIMA Technologies

Türkiye . 277 parts In-Stock

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Corphita

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Overview

Unleash the power of high-quality imaging with the KAI-08052-ABA-JD-AE by Onsemi. As a leading manufacturer in the field of image sensors, Onsemi delivers top-notch technology for a wide range of applications. With its advanced features and reliable performance, this product provides exceptional value to customers seeking superior imaging solutions. Capture every detail with precision and clarity, thanks to the innovative design and cutting-edge technology of the KAI-08052-ABA-JD-AE. Elevate your imaging experience and unlock endless possibilities with this exceptional device.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for high resolution images with fine detail, making this image sensor ideal for applications where image quality is crucial.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage provides flexibility in power input, making it compatible with a wide range of power sources.

Body Width: 29 inch

The compact body width of 29 inches allows for easy integration into various devices and systems without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR,CCD

Being a CCD image sensor ensures high-quality images with low noise levels, making it suitable for applications where image accuracy is important.

Package Shape or Style: RECTANGULAR

The rectangular package shape is a standard form factor that is easy to work with and integrate into different systems.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage ensures efficient power consumption, making this image sensor energy-efficient and cost-effective.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70 °C, this image sensor can withstand a wide range of environmental conditions, increasing its versatility.

Horizontal Pixel: 3296

The high horizontal pixel count provides sharp and detailed images, making this image sensor suitable for applications that require high-resolution pictures.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature of -50 °C ensures reliable performance even in extreme cold conditions, making this image sensor a durable choice.

Dynamic Range: 66 dB

The wide dynamic range of 66 dB allows this image sensor to capture both bright and dark areas accurately, making it versatile for various lighting conditions.

Vertical Pixel: 2472

The high vertical pixel count contributes to the overall image quality, providing clear and detailed images for a wide range of applications.

Body Length/Diameter: 40 mm

The moderate body length of 40 mm offers a balance between compact size and functionality, making this image sensor easy to handle and install.

Optical Format (inch): 4/3

The 4/3 optical format is a common aspect ratio that is compatible with many lenses and systems, making this image sensor versatile in various imaging setups.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections, reducing the risk of signal loss or interference for consistent image quality.

Array Type: INTERLINE

The interline array type allows for faster readout speeds, enabling this image sensor to capture moving objects with minimal motion blur, making it ideal for dynamic imaging applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process, providing a stable and secure attachment for the image sensor in various devices and systems.

Technical Specifications

Image Sensors KAI-08052-ABA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY 35 MICRO VOLT PER ELECTRON; ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

29 inch

Body Length/Diameter:

40 mm

Dynamic Range:

66 dB

Horizontal Pixel:

3296

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2472

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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