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AR0330CM1C21SUD20

Onsemi

AR0330CM1C21SUD20 by Onsemi

The Onsemi AR0330CM1C21SUD20 is a 2.2x2.2 um CMOS image sensor with 2304 horizontal pixels and 1536 vertical pixels. It operates at a max supply voltage of 1.9V, has a master clock of 24 MHz, and offers a dynamic range of 69.5 dB. Ideal for applications requiring high-resolution imaging at frame rates up to 60 fps in automotive cameras and surveillance systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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DigiKey

USA . 13,836 parts In-Stock

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USA . 13,836 parts In-Stock

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Flip Electronics

USA . 13,836 parts In-Stock

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Vyrian

USA . 2,500 parts In-Stock

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Digiode

USA . 463 parts In-Stock

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Native Components

USA . 757 parts In-Stock

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$0.560

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Northwest PG Solutions

USA . 2,138 parts In-Stock

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SupplyDigital Components

Austria . 4,015 parts In-Stock

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TANS Electronics

Latvia . 3,853 parts In-Stock

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Problanco Electronics

Mexico . 2,918 parts In-Stock

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Kulean Microsystems

USA . 2,772 parts In-Stock

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Corphita

USA . 1,399 parts In-Stock

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Corohmni

South Africa . 410 parts In-Stock

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UHIMA Technologies

Türkiye . 317 parts In-Stock

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Overview

Capture life's moments with crystal-clear precision using the AR0330CM1C21SUD20 image sensor by Onsemi. Known for their high-quality products, Onsemi delivers cutting-edge technology that ensures superior performance and reliability. Ideal for a wide range of applications in industries such as automotive, surveillance, and consumer electronics, this image sensor offers unmatched value with its exceptional dynamic range and high frame rate capabilities. Elevate your imaging experience with the AR0330CM1C21SUD20 and see the world in a whole new light.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

Smaller pixel size allows for higher resolution images and better detail in captured images.

Maximum Supply Voltage: 1.9 V

Efficient power consumption with a relatively low maximum supply voltage.

Master Clock: 24 MHz

High master clock frequency enables fast data processing and high frame rates.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology provides high image quality with low power consumption.

Minimum Supply Voltage: 1.7 V

Support for a low minimum supply voltage allows for flexibility in power sources.

Maximum Operating Temperature: 70 °C

Wide operating temperature range suitable for various environmental conditions.

Output Range: 0.4-1.4V

Wide output voltage range provides flexibility for signal processing and compatibility with different systems.

Output Type: DIGITAL VOLTAGE

Digital output simplifies signal processing and integration into digital systems.

Minimum Operating Temperature: -30 °C

Suitable for use in cold environments without compromising performance.

Maximum Operating Current: 137 mA

Low operating current helps in reducing power consumption and heat dissipation.

Dynamic Range: 69.5 dB

High dynamic range allows for capturing a wide range of light intensities in a single image.

Vertical Pixel: 1536

High vertical pixel count enables capturing detailed images with good clarity.

Optical Format (inch): 1/3

Common optical format provides compatibility with a wide range of lenses and optical systems.

Output Interface Type: 2-WIRE INTERFACE

Simple and standard 2-wire interface for easy integration with other devices.

Frame Rate: 60 fps

High frame rate allows for capturing fast-moving objects with smooth motion.

Array Type: FRAME

Frame array type for capturing complete images in a single frame.

Mounting Feature: SURFACE MOUNT

Surface mount feature for easy and secure installation on circuit boards.

Technical Specifications

Image Sensors AR0330CM1C21SUD20 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.7-2.9V

Array Type:

FRAME

Dynamic Range:

69.5 dB

Frame Rate:

60 fps

Horizontal Pixel:

2304

Master Clock:

24 MHz

Mounting Feature:

Maximum Operating Current:

137 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Pixel Size (um):

2.2X2.2

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Vertical Pixel:

1536

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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