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MT9M031I12STMZ-DRBR

Onsemi

MT9M031I12STMZ-DRBR by Onsemi

MT9M031I12STMZ-DRBR by Onsemi is a 1/3 inch CMOS image sensor with 1280x960 resolution, 3.75um pixel size, and 64dB dynamic range. It operates at -30 to 70 °C, with a max supply voltage of 1.95V and frame rate of 60fps. Ideal for digital cameras, surveillance systems, and industrial imaging applications due to its high sensitivity and compact square package design.

Median Price

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Lifecycle Status

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2

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< 1k

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Digiode

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Vyrian

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Problanco Electronics

Mexico . 7,730 parts In-Stock

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TANS Electronics

Latvia . 5,076 parts In-Stock

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Kulean Microsystems

USA . 2,552 parts In-Stock

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SupplyDigital Components

Austria . 1,801 parts In-Stock

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Corphita

USA . 523 parts In-Stock

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Corohmni

South Africa . 496 parts In-Stock

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UHIMA Technologies

Türkiye . 271 parts In-Stock

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Overview

Capture the world in stunning clarity with the MT9M031I12STMZ-DRBR image sensor by Onsemi. As a leader in the industry, Onsemi delivers top-quality products that exceed expectations. This versatile sensor is perfect for a wide range of applications, providing exceptional value and performance to customers. Whether you're in need of high-resolution images for security systems, robotics, or medical devices, the MT9M031I12STMZ-DRBR offers unparalleled benefits and advantages. Trust Onsemi to elevate your imaging experience.

Feature Benefit Bullets

Pixel Size (um): 3.75

Smaller pixel size allows for higher resolution images to be captured with more detail.

Maximum Supply Voltage: 1.95 V

Allows for efficient power consumption and extends the lifespan of the image sensor.

Master Clock: 50 MHz

High master clock frequency enables fast data processing and high-speed image capture.

Body Width: 10 inch

Compact size makes it suitable for integration into various devices without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology provides high performance, low power consumption, and cost-effectiveness.

Vertical Pixel: 960

Higher vertical pixel count allows for capturing detailed images with better clarity and resolution.

Frame Rate: 60 fps

High frame rate ensures smooth and real-time image capturing ideal for fast-moving objects or dynamic scenes.

Mounting Feature: SURFACE MOUNT

Surface mount capability allows for easy and secure installation on PCBs, making it suitable for mass production.

Technical Specifications

Image Sensors MT9M031I12STMZ-DRBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.5 V TO 3.1 V

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.38 mm

Body Length/Diameter:

10 mm

Dynamic Range:

64 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

55 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensitivity (V/lx.s):

5.3 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

960

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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