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KAF-8300-AXC-CP-AA

Onsemi

KAF-8300-AXC-CP-AA by Onsemi

The Onsemi KAF-8300-AXC-CP-AA is an image sensor with 5.4x5.4 um pixel size, offering a dynamic range of 64.4 dB and 3326 horizontal pixels. It operates b/w -10 to 70 °C, making it suitable for high-resolution imaging applications in various industries such as astronomy and microscopy.

Median Price

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Lifecycle Status

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Vyrian

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Digiode

USA . 1,224 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Argo Parts USA

USA . 4,292 parts In-Stock

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SupplyDigital Components

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Continental Prestige Electronics

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Authorized Procurement Solutions

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Problanco Electronics

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Corphita

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TANS Electronics

Latvia . 1,735 parts In-Stock

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UHIMA Technologies

Türkiye . 781 parts In-Stock

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Corohmni

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Kulean Microsystems

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Overview

Unlock a world of high-quality imagery with the KAF-8300-AXC-CP-AA by Onsemi. Manufactured by industry leader Onsemi, this cutting-edge image sensor boasts superior performance and reliability. Ideal for a variety of applications, this CCD image sensor delivers exceptional results with its advanced technology. Experience unparalleled value and benefits as you capture stunning images with ease. Elevate your projects with the KAF-8300-AXC-CP-AA and see the difference for yourself.

Feature Benefit Bullets

Pixel Size (um): 5.4X5.4

Smaller pixels can capture more detailed images with higher resolution.

Maximum Supply Voltage: 15.5 V

Higher supply voltage allows for more power to be delivered to the sensor, resulting in better performance.

Body Width: 20.32 inch

Larger body width provides more space for components, possibly allowing for enhanced features and capabilities.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high-quality imaging, making this product suitable for applications requiring superior image quality.

Body Height: 4.42 mm

Compact body height allows for easy integration into various devices or systems.

Package Shape or Style: RECTANGULAR

Rectangular shape is commonly used for image sensors, making it compatible with standard mounting configurations.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage helps in reducing power consumption and extending battery life in portable devices.

Maximum Operating Temperature: 70 °C

High maximum operating temperature ensures the sensor can function reliably even in challenging environments.

Horizontal Pixel: 3326

Higher horizontal pixel count allows for capturing wider images or more detailed information.

Output Type: ANALOG VOLTAGE

Analog voltage output is versatile and compatible with a wide range of signal processing systems.

Minimum Operating Temperature: -10 °C

Low minimum operating temperature enables the sensor to be used in cold climates or refrigerated environments.

Housing: CERAMIC

Ceramic housing provides durability and thermal stability to protect the sensor components.

Dynamic Range: 64.4 dB

Wide dynamic range allows the sensor to capture both bright and dark areas in the same scene accurately.

Vertical Pixel: 2504

Higher vertical pixel count enhances the sensor's ability to capture detailed images with depth information.

Body Length/Diameter: 29.21 mm

Compact body length or diameter makes the sensor suitable for space-constrained applications.

Data Rate: 28 Mbps

High data rate enables fast transfer of image data for real-time processing or high-speed applications.

Termination Type: SOLDER

Solder termination provides a reliable connection between the sensor and the circuit board for consistent performance.

Array Type: FULL FRAME

Full-frame array type allows for capturing the entire image without cropping or loss of detail.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting offers secure attachment and stability to the sensor within the device or system.

Technical Specifications

Image Sensors KAF-8300-AXC-CP-AA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 23 MICRO V/ELECTRON

Array Type:

FULL FRAME

Body Width:

20.32 inch

Body Height:

4.42 mm

Body Length/Diameter:

29.21 mm

Data Rate:

28 Mbps

Dynamic Range:

64.4 dB

Horizontal Pixel:

3326

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-10 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

5.4X5.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2504

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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