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KAF-8300-AXC-CB-AE

Onsemi

KAF-8300-AXC-CB-AE by Onsemi

The Onsemi KAF-8300-AXC-CB-AE is a CCD image sensor with 5.4x5.4 um pixel size, offering 3326 horizontal and 2504 vertical pixels. It operates b/w -10 to 70 °C, with a dynamic range of 64.4 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,218 parts In-Stock

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Vyrian

USA . 298 parts In-Stock

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SupplyDigital Components

Austria . 8,271 parts In-Stock

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Problanco Electronics

Mexico . 3,420 parts In-Stock

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Corphita

USA . 2,030 parts In-Stock

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TANS Electronics

Latvia . 1,404 parts In-Stock

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UHIMA Technologies

Türkiye . 645 parts In-Stock

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Kulean Microsystems

USA . 321 parts In-Stock

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Corohmni

South Africa . 126 parts In-Stock

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Overview

Unlock the potential of your imaging projects with the KAF-8300-AXC-CB-AE by Onsemi. Boasting superior quality and reliability from a trusted manufacturer, this image sensor is perfect for a wide range of applications. Experience crisp and clear images with its high pixel resolution and dynamic range. Whether you're in the field of astronomy, microscopy, or industrial imaging, this product offers unmatched value and performance. Upgrade your imaging systems today with the KAF-8300-AXC-CB-AE and see the difference for yourself.

Feature Benefit Bullets

Pixel Size (um): 5.4X5.4

Smaller pixel size allows for higher resolution images to be captured with finer details.

Maximum Supply Voltage: 15.5 V

Higher supply voltage allows for better performance and signal processing capabilities.

Body Width: 20.32 inch

Compact body width makes it suitable for applications with limited space.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high image quality and low noise, making them ideal for applications where image fidelity is critical.

Body Height: 4.42 mm

Low body height enables easy integration into various devices and systems.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for efficient placement and mounting in devices.

Minimum Supply Voltage: 14.5 V

Relatively low minimum supply voltage ensures efficient power consumption.

Maximum Operating Temperature: 70 °C

High maximum operating temperature allows for reliable performance in various environmental conditions.

Horizontal Pixel: 3326

High horizontal pixel count enables wider image capture and better detail preservation.

Output Type: ANALOG VOLTAGE

Analog voltage output allows for easy interface with analog signal processing components.

Minimum Operating Temperature: -10 °C

Low minimum operating temperature ensures usability in cold environments.

Housing: CERAMIC

Ceramic housing provides durability and thermal stability for reliable operation.

Dynamic Range: 64.4 dB

High dynamic range enables capturing scenes with both bright and dark elements accurately.

Vertical Pixel: 2504

High vertical pixel count allows for detailed image capture with good resolution.

Body Length/Diameter: 29.21 mm

Compact body length/diameter facilitates easy integration and mounting in various applications.

Data Rate: 28 Mbps

High data rate ensures fast and efficient transfer of image data for real-time processing.

Termination Type: SOLDER

Solder termination allows for secure and reliable connections during installation.

Array Type: FULL FRAME

Full-frame array type ensures maximum image capture without cropping or loss of data.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature provides secure and stable installation in various devices and systems.

Technical Specifications

Image Sensors KAF-8300-AXC-CB-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 23 MICRO V/ELECTRON

Array Type:

FULL FRAME

Body Width:

20.32 inch

Body Height:

4.42 mm

Body Length/Diameter:

29.21 mm

Data Rate:

28 Mbps

Dynamic Range:

64.4 dB

Horizontal Pixel:

3326

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-10 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

5.4X5.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2504

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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