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KAF-8300-AXC-CB-AA

Onsemi

KAF-8300-AXC-CB-AA by Onsemi

The Onsemi KAF-8300-AXC-CB-AA is a CCD image sensor with 5.4x5.4 um pixel size, offering a dynamic range of 64.4 dB and 3326 horizontal pixels. It operates b/w -10 to 70 °C, with a data rate of 28 Mbps, making it ideal for high-resolution imaging applications in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

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1k+

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Verical

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Vyrian

USA . 4,355 parts In-Stock

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Digiode

USA . 267 parts In-Stock

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Problanco Electronics

Mexico . 7,933 parts In-Stock

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SupplyDigital Components

Austria . 6,475 parts In-Stock

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TANS Electronics

Latvia . 5,125 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kulean Microsystems

USA . 4,933 parts In-Stock

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Corphita

USA . 2,148 parts In-Stock

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UHIMA Technologies

Türkiye . 558 parts In-Stock

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Corohmni

South Africa . 223 parts In-Stock

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Overview

Capture the finest details with the KAF-8300-AXC-CB-AA image sensor by Onsemi. Renowned for their superior quality and precision engineering, Onsemi brings you a cutting-edge product that exceeds expectations. Ideal for a wide range of applications, this sensor offers unparalleled performance and clarity. Elevate your projects with the value and benefits that only Onsemi can deliver. Choose excellence, choose Onsemi.

Feature Benefit Bullets

Pixel Size (um): 5.4X5.4

Smaller pixel size results in higher resolution images with more detail.

Maximum Supply Voltage: 15.5 V

Higher supply voltage allows for greater flexibility in power management.

Body Width: 20.32 inch

Compact body width makes the sensor suitable for applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for high-quality image capture and low noise performance.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage helps in reducing power consumption and heat generation.

Maximum Operating Temperature: 70 °C

High operating temperature range ensures reliable performance in various environmental conditions.

Dynamic Range: 64.4 dB

Wide dynamic range allows the sensor to capture both bright and dark areas in a scene accurately.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting provides secure and stable attachment to the device.

Technical Specifications

Image Sensors KAF-8300-AXC-CB-AA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 23 MICRO V/ELECTRON

Array Type:

FULL FRAME

Body Width:

20.32 inch

Body Height:

4.42 mm

Body Length/Diameter:

29.21 mm

Data Rate:

28 Mbps

Dynamic Range:

64.4 dB

Horizontal Pixel:

3326

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-10 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

5.4X5.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2504

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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