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NOIP1SE5000A-LTI

Onsemi

NOIP1SE5000A-LTI by Onsemi

NOIP1SE5000A-LTI by Onsemi is a 4.8x4.8 um CMOS image sensor with 2592H x 2048V pixels, operating at 100 fps with a dynamic range of 60 dB. It has a spectral response of 400-1000 nm and sensitivity of 7.5 V/lx.s, suitable for frame array applications in various industries like surveillance and automotive systems.

Median Price

$221.282

Lifecycle Status

Suppliers In-Stock

7

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1k+

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DigiKey

USA . 29 parts In-Stock

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$220.590

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Verical

USA . 31 parts In-Stock

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$221.975

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Digiode

USA . 989 parts In-Stock

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$212.287

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Vyrian

USA . 6,578 parts In-Stock

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Chip Stock

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Bristol Electronics

USA . 2,000 parts In-Stock

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Flip Electronics

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Corphita

USA . 993 parts In-Stock

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$201.114

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993

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Corohmni

South Africa . 408 parts In-Stock

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$223.460

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Kulean Microsystems

USA . 7,156 parts In-Stock

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TANS Electronics

Latvia . 3,932 parts In-Stock

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SupplyDigital Components

Austria . 2,667 parts In-Stock

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GlobX GmbH

Germany . 2,000 parts In-Stock

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Problanco Electronics

Mexico . 1,972 parts In-Stock

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Perfect Parts

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UHIMA Technologies

Türkiye . 86 parts In-Stock

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Overview

Capture stunning images with the NOIP1SE5000A-LTI image sensor from Onsemi. Known for their high-quality products, Onsemi delivers cutting-edge technology that exceeds expectations. Ideal for a wide range of applications, this sensor offers unparalleled value and performance. Elevate your projects with this versatile sensor that boasts a superior dynamic range and impressive sensitivity. Discover the endless possibilities with the NOIP1SE5000A-LTI by Onsemi today.

Feature Benefit Bullets

Pixel Size (um) 4.8X4.8

Smaller pixel size allows for higher resolution images and better quality.

Maximum Supply Voltage 1.9 V

Lower maximum supply voltage helps in reducing power consumption and heat generation.

Master Clock 360 MHz

High master clock frequency enables faster processing of image data.

Body Width 19 inch

Compact body width makes the sensor suitable for small devices and applications.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS image sensors provide high-quality images with low power consumption.

Body Height 1.78 mm

Low body height allows for easy integration into compact electronic devices.

Package Shape or Style SQUARE

Square package shape provides a symmetrical design for easier mounting and alignment.

Minimum Supply Voltage 1.7 V

Lower minimum supply voltage ensures stable operation with less power consumption.

Maximum Operating Temperature 85 °C

Wide maximum operating temperature range allows for use in various environmental conditions.

Horizontal Pixel 2592

High horizontal pixel count results in detailed and sharp images.

Minimum Operating Temperature -40 °C

Wide minimum operating temperature range ensures operation in extreme cold conditions.

Dynamic Range 60 dB

High dynamic range enables capture of both bright and dark areas in a scene with detail.

Vertical Pixel 2048

High vertical pixel count allows for capturing detailed images with depth and clarity.

Body Length/Diameter 19 mm

Compact body length/diameter makes the sensor suitable for space-constrained applications.

Spectral Response (nm) 400-1000

Wide spectral response range enables capturing images across various lighting conditions.

Termination Type SOLDER

Solder termination type provides a secure and reliable connection for the sensor.

Output Interface Type 4-WIRE INTERFACE

4-wire interface allows for easy integration with other electronic devices.

Frame Rate 100 fps

High frame rate enables capturing fast-moving subjects with smooth motion.

Array Type FRAME

Frame array type allows for capturing full image frames at once for better image quality.

Sensitivity (V/lx.s) 7.5 V/lx.s

High sensitivity means the sensor can capture images in low light conditions with less noise.

Mounting Feature SURFACE MOUNT

Surface mounting feature simplifies installation and makes the sensor suitable for compact devices.

Technical Specifications

Image Sensors NOIP1SE5000A-LTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

19 inch

Body Height:

1.78 mm

Body Length/Diameter:

19 mm

Dynamic Range:

60 dB

Frame Rate:

100 fps

Horizontal Pixel:

2592

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.8X4.8

Sensitivity (V/lx.s):

7.5 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

2048

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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