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KAE-04471-ABA-JP-EE

Onsemi

KAE-04471-ABA-JP-EE by Onsemi

KAE-04471-ABA-JP-EE by Onsemi is an image sensor with 7.4x7.4 um pixel size, 2096 horizontal pixels, and 2096 vertical pixels. It operates b/w -30 to 40 °C with a dynamic range of 72 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings at a max supply voltage of 15.3 V and min supply voltage of 14.7 V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,364 parts In-Stock

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Vyrian

USA . 1,591 parts In-Stock

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TANS Electronics

Latvia . 4,793 parts In-Stock

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Corphita

USA . 2,293 parts In-Stock

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Kulean Microsystems

USA . 1,079 parts In-Stock

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Problanco Electronics

Mexico . 553 parts In-Stock

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Corohmni

South Africa . 331 parts In-Stock

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UHIMA Technologies

Türkiye . 119 parts In-Stock

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SupplyDigital Components

Austria . 110 parts In-Stock

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Overview

Elevate your imaging experience with the KAE-04471-ABA-JP-EE by Onsemi. As a leading manufacturer in image sensors, Onsemi delivers top-notch quality and reliability in their products. This advanced image sensor is perfect for a wide range of applications, offering customers unparalleled value and benefits. With its high performance and innovative features, the KAE-04471-ABA-JP-EE provides an exceptional user experience, making it the ideal choice for all your imaging needs.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Small pixel size allows for high resolution image capturing, making this product suitable for applications requiring detailed imaging.

Maximum Supply Voltage: 15.3 V

Higher supply voltage provides ample power for the sensor to operate effectively, ensuring reliable performance.

Body Width: 41 inch

Compact body width allows for easy integration into various devices and systems without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD image sensors are known for their high-quality image output, making this product a good choice for applications requiring superior image clarity.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for efficient placement and alignment within a device or system.

Minimum Supply Voltage: 14.7 V

Low minimum supply voltage ensures that the sensor can operate within a wide range of power inputs, increasing its versatility.

Maximum Operating Temperature: 40 °C

High maximum operating temperature range allows this sensor to be used in various environmental conditions without risk of damage.

Horizontal Pixel: 2096

Large number of horizontal pixels enables high-resolution image capture, suitable for detailed imaging applications.

Output Type: VOLTAGE OUTPUT

Voltage output simplifies integration with other circuitry and systems, providing a straightforward signal for further processing.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature ensures this sensor can function even in harsh or cold environments.

Maximum Operating Current: 9 mA

Low operating current consumption ensures energy efficiency and longer battery life in devices utilizing this sensor.

Dynamic Range: 72 dB

High dynamic range enables capture of a wide range of light intensities, ensuring accurate and detailed image reproduction.

Vertical Pixel: 2096

Large number of vertical pixels complements the high horizontal pixel count, enhancing overall image resolution and quality.

Body Length/Diameter: 43.5 mm

Compact body length allows for easy integration into devices or systems, contributing to a sleek and space-efficient design.

Optical Format (inch): 4/3

Standard optical format provides compatibility with a wide range of lenses and optical systems, offering flexibility in imaging applications.

Data Rate: 20 Mbps

High data rate allows for quick transmission of image data, suitable for applications requiring real-time imaging or high-speed processing.

Termination Type: SOLDER

Solder termination ensures secure and reliable electrical connections, preventing signal loss or interference in operation.

Frame Rate: 30 fps

High frame rate enables smooth and fluid video recording or image capture, ideal for dynamic or fast-moving scenes.

Array Type: INTERLINE

Interline array type offers fast readout speeds and reduced image lag, making this sensor suitable for applications requiring high-speed imaging.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature provides secure and stable installation of the sensor in a device or system, ensuring durability and reliability.

Technical Specifications

Image Sensors KAE-04471-ABA-JP-EE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC AND GLOBAL SHUTTER; DATA RATE 40 MHZ HCCD; DYNAMIC RANGE 60 AND 92 DB HIGH GAIN AND INTRA-SCENE RESPECTIVELY; SENSITIVITY 45 MICRO V/E-

Array Type:

INTERLINE

Body Width:

41 inch

Body Length/Diameter:

43.5 mm

Data Rate:

20 Mbps

Dynamic Range:

72 dB

Frame Rate:

30 fps

Horizontal Pixel:

2096

Mounting Feature:

Maximum Operating Current:

9 mA

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

4/3

Output Type:

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.3 V

Minimum Supply Voltage:

14.7 V

Termination Type:

SOLDER

Vertical Pixel:

2096

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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