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MT9P401I12STC-DP1

Onsemi

MT9P401I12STC-DP1 by Onsemi

The Onsemi MT9P401I12STC-DP1 is a CMOS image sensor with 2.2x2.2 um pixel size, offering 2592x1944 resolution and 70.1 dB dynamic range. It operates at 48 MHz master clock, suitable for applications requiring high-quality digital imaging in a compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,278 parts In-Stock

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Digiode

USA . 665 parts In-Stock

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AZTECH Wire

Italy . 512 parts In-Stock

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$15.160

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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SupplyDigital Components

Austria . 4,986 parts In-Stock

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Problanco Electronics

Mexico . 4,668 parts In-Stock

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TANS Electronics

Latvia . 3,432 parts In-Stock

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Corphita

USA . 1,019 parts In-Stock

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Kulean Microsystems

USA . 576 parts In-Stock

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UHIMA Technologies

Türkiye . 276 parts In-Stock

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Corohmni

South Africa . 117 parts In-Stock

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Overview

Capture every moment with the MT9P401I12STC-DP1 image sensor by Onsemi. With cutting-edge technology and superior quality, this sensor delivers stunning image quality and precise detail. Perfect for a wide range of applications, from security cameras to smartphones, this sensor offers unparalleled performance and reliability. Experience the value of exceptional images and the benefits of seamless integration with the MT9P401I12STC-DP1. Make every image unforgettable with Onsemi.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

Small pixel size allows for high resolution imaging and low noise performance.

Maximum Supply Voltage: 1.9 V

Efficient power consumption and compatibility with various power sources.

Master Clock: 48 MHz

High-speed operation for quick image processing and data transfer.

Body Width: 10 inch

Compact size for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology provides low power consumption and high sensitivity.

Body Height: 1.25 mm

Slim profile for space-constrained applications.

Package Shape or Style: SQUARE

Standard square package for easy mounting and handling.

Minimum Supply Voltage: 1.7 V

Flexible voltage requirements for versatile operation.

Maximum Operating Temperature: 70 °C

Wide temperature range for operation in various environments.

Horizontal Pixel: 2592

High resolution for detailed imaging and precise data capture.

Output Range: 5.1-8.9mA

Stable output current for consistent performance.

Output Type: DIGITAL CURRENT

Digital output for easy interfacing with other digital devices.

Minimum Operating Temperature: -30 °C

Low temperature operation for use in extreme conditions.

Maximum Operating Current: 80 mA

Low power consumption for energy-efficient operation.

Dynamic Range: 70.1 dB

Wide dynamic range for capturing both dark and bright areas in an image.

Vertical Pixel: 1944

High resolution in both horizontal and vertical dimensions.

Body Length/Diameter: 10 mm

Compact size for easy installation and integration.

Spectral Response (nm): 350-750

Broad spectral response for capturing various colors and light intensities.

Optical Format (inch): 1/2.5

Standard optical format for compatibility with different lenses.

Data Rate: 96 Mbps

High data rate for quick transmission of image data.

Termination Type: SOLDER

Secure solder termination for reliable connection.

Output Interface Type: 2-WIRE INTERFACE

Simple 2-wire interface for easy connection to other devices.

Frame Rate: 60 fps

High frame rate for smooth video recording and motion capture.

Array Type: FULL FRAME

Full-frame array for capturing the entire image in one shot.

Sensitivity (V/lx.s): 1.4 V/lx.s

High sensitivity for low-light imaging and accurate color reproduction.

Mounting Feature: SURFACE MOUNT

Surface mount capability for easy and secure mounting on PCBs.

Technical Specifications

Image Sensors MT9P401I12STC-DP1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT 2.60-3.10 V ANALOG SUPPLY VOLATGE

Array Type:

FULL FRAME

Body Width:

10 inch

Body Height:

1.25 mm

Body Length/Diameter:

10 mm

Data Rate:

96 Mbps

Dynamic Range:

70.1 dB

Frame Rate:

60 fps

Horizontal Pixel:

2592

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

80 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.5

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensitivity (V/lx.s):

1.4 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

350-750

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1944

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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