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KAI-02050-AAA-JR-BA

Onsemi

KAI-02050-AAA-JR-BA by Onsemi

Onsemi's KAI-02050-AAA-JR-BA is a 5.5x5.5 um CCD image sensor with 1600H x 1200V pixels, offering a dynamic range of 64 dB. Operating b/w -50 to 70 °C, it has a supply voltage range of 14.5V to 15.5V and is ideal for digital imaging applications requiring high-quality output in a compact rectangular package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,430 parts In-Stock

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Digiode

USA . 808 parts In-Stock

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Kulean Microsystems

USA . 5,864 parts In-Stock

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SupplyDigital Components

Austria . 5,589 parts In-Stock

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TANS Electronics

Latvia . 3,850 parts In-Stock

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Corphita

USA . 2,077 parts In-Stock

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Problanco Electronics

Mexico . 376 parts In-Stock

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UHIMA Technologies

Türkiye . 325 parts In-Stock

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Corohmni

South Africa . 287 parts In-Stock

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Overview

Unlock the power of crystal-clear imaging with the KAI-02050-AAA-JR-BA by Onsemi. As a leader in image sensor technology, Onsemi delivers uncompromising quality and reliability. Ideal for a wide range of applications, this image sensor offers stunning visual clarity and precision, making it the perfect choice for your next project. Experience the unmatched value and performance that Onsemi brings to the table with the KAI-02050-AAA-JR-BA.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

Provides high resolution and image quality for detailed and clear images.

Maximum Supply Voltage: 15.5 V

Ensures stable and reliable power supply for optimal performance.

Body Width: 20.07 inch

Compact size allows for easy integration into various devices and systems.

Power Supplies (V): 15

Efficient power supply to meet the energy needs of the image sensor.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Utilizes CCD technology for high-quality image capture and processing.

Body Height: 3.33 mm

Low profile design for versatile mounting options and space-saving.

Package Shape or Style: RECTANGULAR

Easily fits into standard packaging and mounting configurations.

Minimum Supply Voltage: 14.5 V

Allows for a range of power supply options and compatibility.

Maximum Operating Temperature: 70 °C

Can operate in a wide temperature range without performance issues.

Horizontal Pixel: 1600

High pixel count for detailed and high-resolution image capture.

Output Type: DIGITAL VOLTAGE

Provides digital output signal for easy integration and connectivity.

Minimum Operating Temperature: -50 °C

Can withstand extremely low temperature environments for versatile use.

Dynamic Range: 64 dB

Provides a wide dynamic range for capturing both bright and dark areas in the image.

Vertical Pixel: 1200

High pixel density for capturing detailed vertical image data.

Body Length/Diameter: 33.02 mm

Optimal size for fitting into various devices and systems efficiently.

Optical Format (inch): 2/3

Standard optical format for compatibility with different lenses and systems.

Termination Type: SOLDER

Secure and reliable solder termination for stable connections.

Array Type: INTERLINE

Interline sensor array structure for efficient image capture and processing.

Mounting Feature: THROUGH HOLE MOUNT

Convenient mounting option for easy installation and integration.

Technical Specifications

Image Sensors KAI-02050-AAA-JR-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

20.07 inch

Body Height:

3.33 mm

Body Length/Diameter:

33.02 mm

Dynamic Range:

64 dB

Horizontal Pixel:

1600

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

2/3

Output Type:

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1200

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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