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NOIV1SN2000A-QDC

Onsemi

NOIV1SN2000A-QDC by Onsemi

NOIV1SN2000A-QDC by Onsemi features 4.80X4.80 um pixel size, 62 MHz master clock, and 1920 horizontal pixels. This image sensor is ideal for applications requiring high-resolution imaging with a max supply voltage of 2V and operating temperature range of 0-70°C.

Median Price

$331.490

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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NAC Semi

USA . 60 parts In-Stock

1+ parts

$331.490

100+ parts

$306.760

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60

$331.490

$306.760

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Vyrian

USA . 6,994 parts In-Stock

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Digiode

USA . 1,866 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Ampacity Inc.

Singapore . 1,549 parts In-Stock

1+ parts

$5.750

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1,549

$5.750

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AZTECH Wire

Italy . 978 parts In-Stock

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$10.280

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978

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Corohmni

South Africa . 361 parts In-Stock

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$327.110

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361

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Problanco Electronics

Mexico . 6,426 parts In-Stock

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Argo Parts USA

USA . 5,789 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kulean Microsystems

USA . 4,683 parts In-Stock

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Continental Prestige Electronics

USA . 2,450 parts In-Stock

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Perfect Parts

USA . 2,083 parts In-Stock

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Corphita

USA . 1,007 parts In-Stock

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TANS Electronics

Latvia . 967 parts In-Stock

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SupplyDigital Components

Austria . 939 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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UHIMA Technologies

Türkiye . 343 parts In-Stock

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343

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Overview

Enhance your imaging system with the NOIV1SN2000A-QDC by Onsemi, a cutting-edge image sensor designed to deliver superior performance and precision. With Onsemi's reputation for quality and innovation in the industry, this sensor offers exceptional reliability and functionality for a wide range of applications. Whether you're looking to enhance security systems, improve medical imaging, or elevate the quality of your photography equipment, this sensor provides unmatched value, benefits, and advantages to meet your needs. Upgrade to the NOIV1SN2000A-QDC today and experience the difference in image quality and performance.

Feature Benefit Bullets

Pixel Size (um)

The small pixel size of 4.80X4.80 um allows for high resolution and sharp images to be captured.

Maximum Supply Voltage

With a maximum supply voltage of 2 V, this image sensor is efficient and operates within a safe power range.

Master Clock

The high master clock speed of 62 MHz enables fast data processing and image capture.

Body Width

The compact body width of 19.05 inch makes this image sensor suitable for applications with limited space.

Power Supplies (V)

The power supply of 3.3 V ensures stable and reliable operation of the image sensor.

Sensors or Transducers Type

Being a CMOS image sensor, it offers low power consumption, high integration, and fast data readout capabilities.

Body Height

The low body height of 2.2 mm allows for easy integration into various devices and systems.

Package Shape or Style

The square package shape provides a compact and sturdy design for the image sensor.

Minimum Supply Voltage

The low minimum supply voltage of 1.6 V helps in saving power and extends the battery life of devices using this image sensor.

Maximum Operating Temperature

With a maximum operating temperature of 70°C, this image sensor can perform reliably even in harsh environmental conditions.

Horizontal Pixel

With a high horizontal pixel count of 1920, this image sensor provides detailed and high-resolution images.

Minimum Operating Temperature

The minimum operating temperature of 0°C ensures that the image sensor can function effectively in a wide range of temperature conditions.

Maximum Operating Current

The low maximum operating current of 60 mA indicates the energy efficiency of this image sensor.

Housing

The ceramic housing offers durability and protective features for the sensitive components within the image sensor.

Dynamic Range

With a dynamic range of 53 dB, this image sensor can capture a wide range of light intensities, resulting in high-quality images.

Vertical Pixel

The vertical pixel count of 1200 contributes to the overall image quality and resolution of the sensor.

Body Length/Diameter

The compact body length/diameter of 19.05 mm makes this image sensor easy to integrate and design around.

Optical Format (inch)

The 2/3 inch optical format is a common and versatile format used in various imaging applications.

Termination Type

The solder termination type ensures secure and reliable connections for the image sensor.

Output Interface Type

The 4-wire interface offers a simple and efficient way to connect the image sensor to other devices.

Frame Rate

With a high frame rate of 92 fps, this image sensor can capture fast-moving subjects with clarity.

Array Type

The frame array type provides a structured and organized arrangement of pixels for efficient image capture.

Mounting Feature

The surface mounting feature simplifies the installation and integration of the image sensor into different devices.

Technical Specifications

Image Sensors NOIV1SN2000A-QDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE SUPPLY VOLTAGE 3.0 TO 3.6 V, ALSO CURRENT CONSUMPTION 125 MA, GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

19.05 inch

Body Height:

2.2 mm

Body Length/Diameter:

19.05 mm

Dynamic Range:

53 dB

Frame Rate:

92 fps

Horizontal Pixel:

1920

Housing:

CERAMIC

Master Clock:

62 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

2/3

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Power Supplies (V):

3.3

Sensors or Transducers Type:

Sub-Category:

Other Sensors/Transducers

Maximum Supply Voltage:

2 V

Minimum Supply Voltage:

1.6 V

Termination Type:

SOLDER

Vertical Pixel:

1200

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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